ADVANCE

CY14E108L, CY14E108N

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +150°C

Supply Voltage on VCC Relative to GND

..........–0.5V to 7.0V

Voltage Applied to Outputs

–0.5V to VCC + 0.5V

in High-Z State

Input Voltage

–0.5V to Vcc+0.5V

Transient Voltage (<20 ns) on

 

Any Pin to Ground Potential

–2.0V to VCC + 2.0V

Package Power Dissipation

 

Capability (TA = 25°C)

1.0W

Surface Mount Pb Soldering

 

Temperature (3 Seconds)

+260°C

Output Short Circuit Current [6]

15 mA

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch Up Current

...................................................

> 200 mA

Operating Range

 

 

 

 

 

Range

 

Ambient Temperature

VCC

Commercial

 

0°C to +70°C

4.5V to 5.5V

 

 

 

 

Industrial

 

–40°C to +85°C

4.5V to 5.5V

 

 

 

 

DC Electrical Characteristics

Over the Operating Range (VCC = 2.7V to 3.6V)[8]

Parameter

Description

 

 

 

 

Test Conditions

 

Min

Max

Unit

ICC1

Average VCC Current

 

tRC = 20 ns

 

 

 

 

 

Commercial

 

70

mA

 

 

 

tRC = 25 ns

 

 

 

 

 

 

 

70

mA

 

 

 

tRC = 45 ns

 

 

 

 

 

 

 

55

mA

 

 

 

Dependent on output loading and cycle

 

 

 

 

 

 

 

Industrial

 

75

mA

 

 

 

rate.Values obtained without output loads.

 

 

 

 

 

 

75

mA

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

57

mA

ICC2

Average VCC Current

 

All Inputs Don’t Care, VCC = Max

 

 

12

mA

 

During STORE

 

Average current for duration tSTORE

 

 

 

 

ICC3[7]

Average VCC Current at

 

 

 

> (VCC

– 0.2). All other I/P cycling.

 

 

38

mA

 

WE

 

 

 

tRC= 200 ns, 5V, 25°C

 

Dependent on output loading and cycle rate. Values obtained

 

 

 

 

typical

 

without output loads.

 

 

 

 

ICC4

Average VCAP Current

 

All Inputs Don’t Care, VCC = Max

 

 

12

mA

 

During AutoStore Cycle

Average current for duration tSTORE

 

 

 

 

ISB

VCC Standby Current

 

 

> (VCC – 0.2). All others VIN < 0.2V or > (VCC – 0.2V).

 

6

mA

CE

 

 

 

 

Standby current level after nonvolatile cycle is complete.

 

 

 

 

 

 

Inputs are static. f = 0 MHz.

 

 

 

 

IIX

Input Leakage Current

 

VCC = Max, VSS < VIN < VCC

 

–2

+2

μA

 

(except HSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Leakage Current

 

VCC = Max, VSS < VIN < VCC

 

–200

+2

μA

 

(For HSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Off-State Output

 

VCC = Max, VSS < VIN < VCC,

 

or

 

> VIH

 

–2

+2

μA

 

CE

OE

 

 

Leakage Current

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

2.0

VCC + 0.5

V

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

Vss – 0.5

0.8

V

VOH

Output HIGH Voltage

 

IOUT = –2 mA

 

2.4

 

V

VOL

Output LOW Voltage

 

IOUT = 4 mA

 

 

0.4

V

VCAP

Storage Capacitor

Between VCAP pin and VSS, 5V Rated

 

122

164

μF

Notes

6.Outputs shorted for no more than one second. No more than one output shorted at a time.

7.Typical conditions for the active current shown on the front page of the data sheet are average values at 25°C (room temperature) and VCC = 5V. Not 100% tested.

8.The HSB pin has IOUT=-10uA for VOH of 2.4V. This parameter is characterized but not tested.

Document Number: 001-45524 Rev. *A

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Cypress CY14E108N, CY14B102N manual Maximum Ratings, Operating Range, DC Electrical Characteristics

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.