Cypress CY14E108N, CY14B102N manual AC Switching Characteristics, Sram Read Cycle, Sram Write Cycle

ADVANCE

CY14E108L, CY14E108N

AC Switching Characteristics

In the following table, the AC switching characteristics are listed.

	Parameters			Description	20 ns		25 ns		45 ns		Unit
	Cypress		Alt		Min	Max	Min	Max	Min	Max
	Parameters		Parameters
SRAM Read Cycle
tACE		tACS		Chip Enable Access Time		20		25		45	ns
tRC[10]		tRC		Read Cycle Time	20		25		45		ns
t	[11]	t	AA	Address Access Time		20		25		45	ns
	AA
tDOE		tOE		Output Enable to Data Valid		10		12		20	ns
tOHA		tOH		Output Hold After Address Change	3		3		3		ns
tLZCE[12]		tLZ		Chip Enable to Output Active	3		3		3		ns
tHZCE[12]		tHZ		Chip Disable to Output Inactive		8		10		15	ns
tLZOE[12]		tOLZ		Output Enable to Output Active	0		0		0		ns
tHZOE[12]		tOHZ		Output Disable to Output Inactive		8		10		15	ns
tPU[10]		tPA		Chip Enable to Power Active	0		0		0		ns
tPD[10]		tPS		Chip Disable to Power Standby		20		25		45	ns
tDBE		-		Byte Enable to Data Valid		10		12		20	ns
tLZBE		-		Byte Enable to Output Active	0		0		0		ns
tHZBE		-		Byte Disable to Output Inactive		8		10		15	ns
SRAM Write Cycle
tWC		tWC		Write Cycle Time	20		25		45		ns
tPWE		tWP		Write Pulse Width	15		20		30		ns
tSCE		tCW		Chip Enable To End of Write	15		20		30		ns
tSD		tDW		Data Setup to End of Write	8		10		15		ns
tHD		tDH		Data Hold After End of Write	0		0		0		ns
tAW		tAW		Address Setup to End of Write	15		20		30		ns
tSA		tAS		Address Setup to Start of Write	0		0		0		ns
tHA		tWR		Address Hold After End of Write	0		0		0		ns
tHZWE[12,13]		tWZ		Write Enable to Output Disable		8		10		15	ns
tLZWE[12]		tOW		Output Active after End of Write	3		3		3		ns
tBW		-		Byte Enable to End of Write	15		20		30		ns

Notes

10.WE must be HIGH during SRAM read cycles.

11.Device is continuously selected with CE and OE both LOW.

12.Measured ±200 mV from steady state output voltage.

13.If WE is LOW when CE goes LOW, the output goes into high impedance state.

Document Number: 001-45524 Rev. *A Page 9 of 20

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