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CY14E108L, CY14E108N

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Document Title: CY14E108L/CY14E108N 8 Mbit (1024K x 8/512K x 16) nvSRAM

Document Number: 001- 45524

REV.

ECN NO.

Submission

Orig. of

Description of Change

Date

Change

 

 

 

 

 

 

 

 

**

2428826

See ECN

GVCH

New Data Sheet

 

 

 

 

 

**

2520023

06/23/08

GVCH/PYRS

Updated ICC1 for tRC=20ns, 25ns and 45ns access speed for both

 

 

 

 

industrial and Commecial temperature Grade

 

 

 

 

Updated Thermal resistance values for 48-FBGA,44-TSOP II and

 

 

 

 

54-TSOP II packages

 

 

 

 

Changed tCW value from 16ns to 15ns

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© Cypress Semiconductor Corporation, 2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress.

Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Use may be limited by and subject to the applicable Cypress software license agreement.

Document Number: 001-45524 Rev. *A

Revised June 24, 2008

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Cypress CY14B102N Document History, Sales, Solutions, and Legal Information, Submission Orig. Description of Change Date

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.