CY7C027V/027VN/027AV/028V
CY7C037V/037AV/038V
3.3V 32K/64K x 16/18 Dual-Port StaticRAM

Cypress Semiconductor Corporation 198 Champion Court San Jose

,

CA 95134-1709 408-943-2600

Document #: 38-06078 Rev. *B Revised December 09, 2008

Features

True Dual-Ported memory cells which allow

simultaneous access of the same memory location

32K x 16 organization (CY7C027V/027VN/027AV

[1]

)

64K x 16 organization (CY7C028V)

32K x 18 organization (CY7C037V/037AV

[2]

)

64K x 18 organization (CY7C038V)

0.35 micron CMOS for optimum speed and power

High speed access: 15, 20, and 25 ns

Low operating power

Active: I

CC

= 115 mA (typical)

Standby: I

SB3

= 10 μA (typical)

Fully asynchronous operation

Automatic power down

Expandable data bus to 32/36 bits or more using Master/Slave

chip select when using more than one device

On-chip arbitration logic

Semaphores included to permit software handshaking

between ports

INT flag for port-to-port communication

Separate upper-byte and lower-byte control

Dual chip enables

Pin select for Master or Slave

Commercial and Industrial temperature ranges

100-pin Pb-free TQFP and 100-pin TQFP

Notes
1. CY7C027V, CY7C027VN and CY7C027AV are functionally identical.
2. CY7C037V and CY7C037AV are functionally identical.
3. I/O
8
–I/O
15
for x16 devices; I/O
9
–I/O
17
for x18 devices.
4. I/O
0
–I/O
7
for x16 devices; I/O
0
–I/O
8
for x18 devices.
5. A
0
–A
14
for 32K; A
0
–A
15
for 64K devices.
6. BUSY is an output in master mode and an input in slave mode.
R/W
L
CE
0L
CE
1L
OE
L
I/O
8/9L
–I/O
15/17L
I/O
Control
Address
Decode
A
0L
–A
14/15L
CE
L
OE
L
R/W
L
BUSY
L
I/O
Control
CE
L
Interrupt
Semaphore
Arbitration
SEM
L
INT
L
M/S
UB
L
LB
L
I/O
0L
–I/O
7/8L
R/W
R
CE
0R
CE
1R
OE
R
I/O
8/9L
–I/O
15/17R
CE
R
UB
R
LB
R
I/O
0L
–I/O
7/8R
UB
L
LB
L

Logic Block Diagram

A
0L
–A
14/15L
True Dual-Ported
RAM Array
A
0R
–A
14/15R
CE
R
OE
R
R/W
R
BUSY
R
SEM
R
INT
R
UB
R
LB
R
Address
Decode A
0R
–A
14/15R
[3] [3]
[4] [4]
[5] [5]
[6] [6]
[5] [5]
15/16
8/9
8/9
15/16
8/9
8/9
15/16 15/16
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