CY7C027V/027VN/027AV/028V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C037V/037AV/038V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Left Port

 

 

 

 

 

 

 

 

 

 

Right Port

 

 

Description

 

 

 

CE

0L, CE1L

 

CE

0R, CE1R

Chip Enable

(CE

is LOW when

CE

0 VIL and CE1 VIH)

 

 

 

R/W

L

 

R/W

R

Read/Write Enable

 

 

OE

L

 

OE

R

Output Enable

 

 

A0L–A15L

 

A0R–A15R

Address (A0–A14for 32K; A0–A15for 64K devices)

 

 

 

I/O0L–I/O17L

 

I/O0R–I/O17R

Data Bus Input/Output (I/O0–I/O15for x16 devices; I/O0–I/O17for x18)

 

 

 

SEM

L

 

SEM

R

Semaphore Enable

 

 

UB

L

 

UB

R

Upper Byte Select (I/O8–I/O15for x16 devices; I/O9–I/O17for x18 devices)

 

 

LB

L

 

LB

R

Lower Byte Select (I/O0–I/O7for x16 devices; I/O0–I/O8for x18 devices)

 

 

INT

L

 

INT

R

Interrupt Flag

 

 

BUSY

L

 

BUSY

R

Busy Flag

 

 

M/S

 

 

 

 

 

 

 

 

 

 

 

 

Master or Slave Select

 

 

VCC

 

 

 

 

 

 

 

 

 

 

Power

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

Ground

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NC

 

 

 

 

 

 

 

 

 

 

No Connect

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Architecture

The CY7C027V/027VN/027AV/028V and CY7037V/037AV/038V consist of an array of 32K and 64K words of 16 and 18 bits each of dual-port RAM cells, I/O and address lines, and control signals (CE, OE, R/W). These control pins permit independent access for reads or writes to any location in memory. To handle simultaneous writes/reads to the same location, a BUSY pin is provided on each port. Two interrupt (INT) pins can be utilized for port-to-port communication. Two semaphore (SEM) control pins are used for allocating shared resources. With the M/S pin, the devices can function as a master (BUSY pins are outputs) or as a slave (BUSY pins are inputs). The devices also have an automatic power down feature controlled by CE. Each port is provided with its own output enable control (OE), which allows data to be read from the device.

Functional Description

The CY7C027V/027VN/027AV/028V and CY7037V/037AV/038V are low power CMOS 32K, 64K x 16/18 dual-port static RAMs. Various arbitration schemes are included on the devices to handle situations when multiple processors access the same piece of data. Two ports are provided, permit- ting independent, asynchronous access for reads and writes to any location in memory. The devices can be utilized as stand-alone 16/18-bit dual-port static RAMs or multiple devices can be combined to function as a 32/36-bit or wider master/slave dual-port static RAM. An M/S pin is provided for implementing 32/36-bit or wider memory applications without the need for sep- arate master and slave devices or additional discrete logic. Ap- plication areas include interprocessor/multiprocessor designs, communications status buffering, and dual-port video/graphics memory.

Each port has independent control pins: chip enable (CE), read or write enable (R/W), and output enable (OE). Two flags are provided on each port (BUSY and INT). BUSY signals that the port is trying to access the same location currently being accessed by the other port. The interrupt flag (INT) permits communication between ports or

systems by means of a mail box. The semaphores are used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphore logic is comprised of eight shared latches. Only one side can control the latch (semaphore) at any time. Control of a semaphore indicates that a shared resource is in use. An automatic power down feature is controlled independently on each port by a chip select (CE) pin.

The CY7C027V/027VN/027AV/028V and CY7037V/037AV/038V are available in 100-pin Thin Quad Plas- tic Flatpacks (TQFP).

Write Operation

Data must be set up for a duration of tSD before the rising edge of R/W to guarantee a valid write. A write operation is controlled by either the R/W pin (see Figure 7) or the CE pin (see Figure 8). Required inputs for non-contention operations are summarized in Table 1.

If a location is being written to by one port and the opposite port attempts to read that location, a port-to-port flowthrough delay must occur before the data is read on the output; otherwise the data read is not deterministic. Data is valid on the port tDDD after the data is presented on the other port.

Read Operation

When reading the device, the user must assert both the OE and CE pins. Data is available tACE after CE or tDOE after OE is asserted. If the user wishes to access a semaphore flag, then the SEM pin must be asserted instead of the CE pin, and OE must also be asserted.

Interrupts

The upper two memory locations may be used for message passing. The highest memory location (7FFF for the CY7C027V/027VN/027AV/37V, FFFF for the CY7C028V/38V) is the mailbox for the right port and the second-highest memory location (7FFE for the CY7C027V/027VN/027AV/037V/037AV, FFFE for the CY7C028V/38V) is the mailbox for the left port. When one port writes to the other port’s mailbox, an interrupt is

Document #: 38-06078 Rev. *B

Page 4 of 18

[+] Feedback

Page 4
Image 4
Cypress CY7C027AV, CY7C037AV, CY7C037V, CY7C028V, CY7C027VN, CY7C038V Pin Definitions, Architecture, Functional Description