CY7C027V/027VN/027AV/028V
CY7C037V/037AV/038V
Document #: 38-06078 Rev. *B Page 10 of 18
Notes
20.R/W must be HIGH during all address transitions.
21.A write occurs during the overlap (t
SCE
or t
PWE
) of a LOW CE or SEM and a LOW UB or LB.
22.t
HA
is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle.
23.If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
PWE
or (t
HZWE
+ t
SD
) to allow the I/O drivers to turn off and data to be placed on
the bus for the required t
SD
. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified t
PWE
.
24.To access RAM, CE = V
IL
, SEM = V
IH
.
25.To access upper byte, CE = V
IL
, UB = V
IL
, SEM = V
IH
.
To access lower byte, CE = V
IL
, LB = V
IL
, SEM = V
IH
.
26.Transition is measured ±500 mV from steady state with a 5 pF load (including scope and jig). This parameter is sampled and not 100% tested.
27.During this period, the I/O pins are in the output state, and input signals must not be applied.
28.If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high impedance state.
Switching Waveforms
(continued)
t
AW
t
WC
t
PWE
t
HD
t
SD
t
HA
CE
R/W
OE
DATAOUT
DATA IN
ADDRESS
t
HZOE
t
SA
t
HZWE
t
LZWE
Figure 7. Write Cycle No. 1: R/W Controlled Timing[20, 21, 22, 23]
[26]
[26]
[23]
[24,25]
NOTE 27 NOTE 27
t
AW
t
WC
t
SCE
t
HD
t
SD
t
HA
CE
R/W
DATA IN
ADDRESS
t
SA
Figure 8. Write Cycle No. 2: CE Controlled Timing[20, 21, 22, 28]
[24,25]
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