Cypress CY7C037AV Switching Characteristics Over the Operating Range6, Including scope and jig

Models: CY7C027AV CY7C037V CY7C027VN CY7C037AV CY7C038V CY7C027V CY7C028V

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CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Figure 3. AC Test Loads and Waveforms

OUTPUT

C = 30 pF

3.3V

R1 = 590Ω

OUTPUT

 

 

 

 

 

RTH = 250Ω

R2 = 435Ω

C = 30 pF

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C = 5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTH = 1.4V

 

 

 

 

 

 

 

 

 

 

 

3.3V

R1 = 590Ω

R2 = 435Ω

(a) Normal Load (Load 1)

(b) Thévenin Equivalent (Load 1)

(c) Three-State Delay(Load 2)

 

 

(Used for tLZ, tHZ, tHZWE, & tLZWE

 

ALL INPUTPULSES

including scope and jig)

3.0V

GND 10%

3 ns

90%

90%

10%

3 ns

Switching Characteristics Over the Operating Range[6]

 

 

 

 

 

 

 

CY7C027V/027VN/027AV/028V/

 

 

 

Parameter

 

 

 

Description

 

 

CY7C037V/037AV/038V

 

 

Unit

 

 

 

-15

 

 

-20

 

-25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

 

Max

Min

 

Max

Min

 

Max

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

15

 

 

20

 

 

25

 

 

ns

tAA

 

Address to Data Valid

 

 

15

 

 

20

 

 

25

ns

tOHA

 

Output Hold From Address Change

3

 

 

3

 

 

3

 

 

ns

tACE[7]

 

CE

 

LOW to Data Valid

 

 

15

 

 

20

 

 

25

ns

tDOE

 

OE

LOW to Data Valid

 

 

10

 

 

12

 

 

13

ns

tLZOE[8, 9, 10]

 

OE

LOW to Low Z

3

 

 

3

 

 

3

 

 

ns

tHZOE[8, 9, 10]

 

OE

HIGH to High Z

 

 

10

 

 

12

 

 

15

ns

tLZCE[8, 9, 10]

 

CE

LOW to Low Z

3

 

 

3

 

 

3

 

 

ns

tHZCE[8, 9, 10]

 

CE

HIGH to High Z

 

 

10

 

 

12

 

 

15

ns

tPU[10]

 

CE

LOW to Power Up

0

 

 

0

 

 

0

 

 

ns

tPD[10]

 

CE

HIGH to Power Down

 

 

15

 

 

20

 

 

25

ns

tABE[7]

 

Byte Enable Access Time

 

 

15

 

 

20

 

 

25

ns

Write Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

15

 

 

20

 

 

25

 

 

ns

tSCE[7]

 

CE

LOW to Write End

12

 

 

16

 

 

20

 

 

ns

tAW

 

Address Valid to Write End

12

 

 

16

 

 

20

 

 

ns

tHA

 

Address Hold From Write End

0

 

 

0

 

 

0

 

 

ns

tSA[7]

 

Address Setup to Write Start

0

 

 

0

 

 

0

 

 

ns

tPWE

 

Write Pulse Width

12

 

 

17

 

 

22

 

 

ns

tSD

 

Data Setup to Write End

10

 

 

12

 

 

15

 

 

ns

Notes

6.Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOI/IOH and 30 pF load capacitance.

7.To access RAM, CE=L, UB=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire tSCE time.

8.At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.

9.Test conditions used are Load 2.

10.This parameter is guaranteed by design, but it is not production tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Figure 11.

Document #: 38-06078 Rev. *B

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Cypress CY7C037AV Switching Characteristics Over the Operating Range6, Including scope and jig, Read Cycle, Write Cycle