CY7C1034DV33
Document Number: 001-08351 Rev. *C Page 3 of 9

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied............................................ –55°C to +125°C
Supply Voltage on VCC Relative to GND [2]....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State [2]...................................–0.5V to VCC + 0.5V
DC Input Voltage [2]...............................–0.5V to VCC + 0.5V
Current into Outputs (LOW)........................................ 20 mA
Static Discharge Voltage............................................>2001V
(MIL-STD-883, Method 3015)
Latch up Current......................................................>200 mA

Operating Range

Range Ambient
Tempe ratu re VCC
Industrial –40°C to +85°C3.3V ± 0.3V

DC Electrical Characteristics

Over the operating range
Parameter Description Test Conditions [3] –10 Unit
Min Max
VOH Output HIGH Voltage VCC = Min, IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage VCC = Min, IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage 2.0 VCC + 0.3 V
VIL [2] Input LOW Voltage –0.3 0.8 V
IIX Input Leakage Current GND < VI < VCC –1 +1 μA
IOZ Output Leakage Current GND < VOUT < VCC, output disabled –1 +1 μA
ICC VCC Operating Supply
Current
VCC = Max, f = fMAX = 1/tRC,
IOUT = 0 mA CMOS levels
175 mA
ISB1 Automatic CE Power Down
Current — TTL Inputs
Max VCC, CE1, CE3 > VIH, CE2 < VIL,
VIN > VIH or VIN < VIL, f = fMAX
30 mA
ISB2 Automatic CE Power Down
Current — CMOS Inputs
Max VCC, CE1, CE3 > VCC – 0.3V, CE2 < 0.3V,
VIN > VCC – 0.3V, or VIN < 0.3V, f = 0
25 mA

Capacitance

Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz, VCC = 3.3V 8 pF
COUT IO Capacitance 10 pF

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions 119-Bal l
PBGA Unit
ΘJA Thermal Resistance
(Junction to Ambient)
Still air, soldered on a 3 × 4.5 inch,
four layer printed circuit board
20.31 °C/W
ΘJC Thermal Resistance
(Junction to Case)
8.35 °C/W
Notes
2. VIL (min) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns.
3. CE refers to a combination of CE1, CE2, and CE3. CE is active LOW when CE1 is LOW, CE2 is HIGH, and CE3 is LOW. CE is HIGH when CE1 is HIGH or CE2 is LOW
or CE3 is HIGH.
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