Cypress CY7C1215H Interleaved Burst Address Table Mode = Floating or VDD, Next Cycle Add. Used

CY7C1215H

Interleaved Burst Address Table (MODE = Floating or VDD)

First	Second	Third	Fourth
Address	Address	Address	Address
A1, A0	A1, A0	A1, A0	A1, A0
00	01	10	11
01	00	11	10
10	11	00	01
11	10	01	00

ZZ Mode Electrical Characteristics

Linear Burst Address Table (MODE = GND)

First	Second	Third	Fourth
Address	Address	Address	Address
A1, A0	A1, A0	A1, A0	A1, A0
00	01	10	11
01	10	11	00
10	11	00	01
11	00	01	10

Parameter

Description

Test Conditions

Min.

Max.

Unit

IDDZZ

Sleep mode standby current

ZZ > VDD – 0.2V

40

mA

tZZS

Device operation to ZZ

ZZ > VDD – 0.2V

2tCYC

ns

tZZREC

ZZ recovery time

ZZ < 0.2V

2tCYC

ns

tZZI

ZZ Active to sleep current

This parameter is sampled

2tCYC

ns

tRZZI

ZZ Inactive to exit sleep current

This parameter is sampled

0

ns

Truth Table[2, 3, 4, 5, 6]

Next Cycle

Add. Used

ZZ

CE

1

CE2

CE

3

ADSP

ADSC

ADV

OE

DQ

Write

Unselected

None

L

H

X

X

X

L

X

X

Tri-State

X

Unselected

None

L

L

X

H

L

X

X

X

Tri-State

X

Unselected

None

L

L

L

X

L

X

X

X

Tri-State

X

Unselected

None

L

L

X

H

H

L

X

X

Tri-State

X

Unselected

None

L

L

L

X

H

L

X

X

Tri-State

X

Begin Read

External

L

L

H

L

L

X

X

X

Tri-State

X

Begin Read

External

L

L

H

L

H

L

X

X

Tri-State

Read

Continue Read

Next

L

X

X

X

H

H

L

H

Tri-State

Read

Continue Read

Next

L

X

X

X

H

H

L

L

DQ

Read

Continue Read

Next

L

H

X

X

X

H

L

H

Tri-State

Read

Continue Read

Next

L

H

X

X

X

H

L

L

DQ

Read

Suspend Read

Current

L

X

X

X

H

H

H

H

Tri-State

Read

Suspend Read

Current

L

X

X

X

H

H

H

L

DQ

Read

Suspend Read

Current

L

H

X

X

X

H

H

H

Tri-State

Read

Suspend Read

Current

L

H

X

X

X

H

H

L

DQ

Read

Begin Write

Current

L

X

X

X

H

H

H

X

Tri-State

Write

Begin Write

Current

L

H

X

X

X

H

H

X

Tri-State

Write

Begin Write

External

L

L

H

L

H

H

X

X

Tri-State

Write

Continue Write

Next

L

X

X

X

H

H

H

X

Tri-State

Write

Notes:

2.X = “Don't Care.” H = Logic HIGH, L = Logic LOW.

3.WRITE = L when any one or more Byte Write Enable signals (BWA,BWB,BWC,BWD) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals (BWA,BWB,BWC,BWD), BWE, GW = H.

4.The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.

5.The SRAM always initiates a Read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A:D]. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to Tri-State. OE is a don't care for the remainder of the Write cycle

6.OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle all data bits are Tri-State when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).

Document #: 38-05666 Rev. *B Page 5 of 15

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