CY7C1215H

1-Mbit (32K x 32) Pipelined Sync SRAM

Features

Registered inputs and outputs for pipelined operation

32K × 32 common I/O architecture

3.3V core power supply (VDD)

2.5V/3.3V I/O power supply (VDDQ)

Fast clock-to-output times

— 3.5 ns (for 166-MHz device)

Provide high-performance 3-1-1-1 access rate

User-selectable burst counter supporting Intel

Pentium® interleaved or linear burst sequences

Separate processor and controller address strobes

Synchronous self-timed write

Asynchronous output enable

Offered in JEDEC-standard lead-free 100-pin TQFP package

“ZZ” Sleep Mode Option

Functional Description[1]

The CY7C1215H SRAM integrates 32K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to four bytes wide as controlled by the Byte Write control inputs. GW when active LOW causes all bytes to be written.

The CY7C1215H operates from a +3.3V core power supply while all outputs may operate either with a + 2.5V or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.

Logic Block Diagram

 

 

 

 

 

 

 

 

A0, A1, A

ADDRESS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REGISTER

 

2

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

 

 

 

 

 

 

 

ADV

 

 

 

Q1

 

 

 

 

 

CLK

 

 

BURST

 

 

 

 

 

 

 

COUNTER

 

 

 

 

 

 

 

CLR

AND

Q0

 

 

 

 

 

ADSC

 

 

LOGIC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

 

 

 

DQD

 

 

DQD

 

 

 

 

 

BWD

BYTE

 

 

BYTE

 

 

 

 

 

 

WRITE REGISTER

 

 

WRITE DRIVER

 

 

 

 

 

 

DQC

 

 

DQC

 

 

 

 

 

BWC

BYTE

 

 

BYTE

 

 

 

OUTPUT

 

 

WRITE REGISTER

 

 

WRITE DRIVER

MEMORY

SENSE

OUTPUT

DQs

 

 

 

BUFFERS

 

 

 

 

 

ARRAY

REGISTERS

 

 

 

 

DQB

AMPS

E

 

 

DQB

 

 

 

 

 

 

 

 

 

 

 

 

BWB

BYTE

 

 

BYTE

 

 

 

 

 

 

 

WRITE DRIVER

 

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQA

 

 

DQA

 

 

 

 

 

 

 

 

BYTE

 

 

 

 

 

BWA

BYTE

 

 

 

 

 

 

 

 

 

WRITE DRIVER

 

 

 

 

 

BWE

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GW

 

 

 

 

 

 

 

 

INPUT

ENABLE

PIPELINED

 

 

 

 

 

REGISTERS

CE1

REGISTER

 

 

 

 

 

 

ENABLE

 

 

 

 

 

 

CE2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE3

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

 

 

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

 

 

 

 

 

 

 

 

 

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation

198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05666 Rev. *B

 

Revised July 5, 2006

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Cypress CY7C1215H manual Features, Functional Description1, Logic Block Diagram, Cypress Semiconductor Corporation