CY7C1303BV25

CY7C1306BV25

Document History Page

Document Title: CY7C1303BV25/CY7C1306BV25 18-Mbit Burst of 2 Pipelined SRAM with QDR™ Architecture

Document Number: 38-05627

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

**

253010

See ECN

SYT

New Data Sheet

 

 

 

 

 

*A

436864

See ECN

NXR

Converted from Preliminary to Final.

 

 

 

 

Removed 133 MHz & 100 MHz from product offering.

 

 

 

 

Included the Industrial Operating Range.

 

 

 

 

Changed C/C Description in the Features Section & Pin Description Table.

 

 

 

 

Changed tTCYC from 100 ns to 50 ns, changed tTF from 10 MHz to 20 MHz

 

 

 

 

and changed tTH and tTL from 40 ns to 20 ns in TAP AC Switching

 

 

 

 

Characteristics table

 

 

 

 

Modified the ZQ pin definition as follows:

 

 

 

 

Alternately, this pin can be connected directly to VDDQ, which enables the

 

 

 

 

minimum impedance mode

 

 

 

 

Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND

 

 

 

 

Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD.

 

 

 

 

Modified the Description of IX from Input Load current to Input Leakage

 

 

 

 

Current on page # 15.

 

 

 

 

Modified test condition in note# 13 from VDDQ < VDD to VDDQ VDD

 

 

 

 

Updated the Ordering Information table and replaced the Package Name

 

 

 

 

Column with Package Diagram.

Document #: 38-05627 Rev. *A

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Cypress CY7C1303BV25, CY7C1306BV25 manual Document History, Issue Date Orig. Description of Change, Syt, Nxr