CY7C1316CV18, CY7C1916CV18

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1318CV18, CY7C1320CV18

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions (continued)

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Name

IO

 

 

 

 

 

 

 

 

Pin Description

 

CQ

Output Clock

 

CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock

 

 

 

 

 

 

for output data (C) of the DDR-II. In single clock mode, CQ is generated with respect to K. The timing for

 

 

 

 

 

 

the echo clocks is shown in Switching Characteristics on page 23.

 

 

 

 

Output Clock

 

 

Referenced with Respect to

 

. This is a free running clock and is synchronized to the input clock

 

CQ

 

 

 

CQ

C

 

 

 

 

 

 

for output data

(C)

of the DDR-II. In single clock mode, CQ is generated with respect to K. The timing for

 

 

 

 

 

 

the echo clocks is shown in Switching Characteristics on page 23.

 

ZQ

Input

 

Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus

 

 

 

 

 

 

impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected

 

 

 

 

 

 

between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the

 

 

 

 

 

 

minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.

 

 

 

 

Input

 

DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing

 

DOFF

 

 

 

 

 

 

in the DLL turned off operation is different from that listed in this data sheet. For normal operation, this

 

 

 

 

 

 

pin can be connected to a pull up through a 10 KΩ or less pull up resistor. The device behaves in DDR-I

 

 

 

 

 

 

mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167

 

 

 

 

 

 

MHz with DDR-I timing.

 

TDO

Output

 

TDO for JTAG.

 

 

 

 

 

 

TCK

Input

 

TCK Pin for JTAG.

 

 

 

 

 

 

TDI

Input

 

TDI Pin for JTAG.

 

 

 

 

 

 

TMS

Input

 

TMS Pin for JTAG.

 

 

 

 

 

 

NC

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/36M

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/72M

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/144M

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/288M

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

VREF

Input-

 

Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC

 

 

 

 

Reference

 

measurement points.

 

VDD

Power Supply

 

Power Supply Inputs to the Core of the Device.

 

VSS

Ground

 

Ground for the Device.

 

VDDQ

Power Supply

 

Power Supply Inputs for the Outputs of the Device.

Document Number: 001-07160 Rev. *E

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Cypress CY7C1916CV18 manual Referenced with Respect to, TDO for Jtag, TCK Pin for Jtag, TDI Pin for Jtag, TMS Pin for Jtag
Page 6 Page 8

CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, CY7C1318CV18 specifications

Cypress Semiconductor, a leading provider of high-performance memory solutions, offers a range of Static Random-Access Memory (SRAM) products ideal for various applications. Among these are the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18, each designed to meet the demands of modern electronic systems with distinctive features, technologies, and characteristics.

The CY7C1320CV18 is a high-performance 2-Mbit SRAM that operates at a voltage of 1.8V. Designed with speed in mind, it has access times as low as 12 ns, making it suitable for applications requiring quick data retrieval. The device features a simple asynchronous interface, allowing it to be easily integrated into various circuits. With a low power consumption profile and the ability to operate under a wide temperature range, the CY7C1320CV18 is an ideal choice for battery-operated devices and industrial environments.

Following closely, the CY7C1916CV18 is a highly integrated, 16-Mbit synchronous SRAM. This device stands out due to its robust data transfer capabilities, supporting a single-cycle read and write operation, which greatly enhances system performance. The device operates with a supply voltage of 1.8V and features an impressive latency, making it perfect for high-speed applications such as digital signal processing and telecommunications. The unique pipelined architecture allows for higher throughput and efficiency in memory access.

The CY7C1316CV18 is another notable member of this family, featuring 16K x 8 bits of memory. It is characterized by low power consumption and a fast access time, which helps to reduce latency in critical applications. With a simple asynchronous interface and competitive pricing, the CY7C1316CV18 is suitable for consumer electronics and automotive applications that require reliable performance.

Lastly, the CY7C1318CV18 is a comprehensive solution featuring 32K x 8 bits of memory. This device also operates with low power and high speed, making it efficient for caching, buffering, and temporary storage applications. Its compatibility with industry standards makes it easily integrable into existing systems.

In summary, the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18 SRAM devices from Cypress Semiconductor showcase cutting-edge technology, high performance, and versatility, catering to the evolving needs of today's electronics, from telecommunications to consumer devices. Their low power consumption, high-speed access, and reliable data integrity make them essential components in modern electronic designs.
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