CY7C1316CV18, CY7C1916CV18

CY7C1318CV18, CY7C1320CV18

Switching Characteristics (continued)

Over the Operating Range [20, 21]

Cypress

Consortium

 

 

 

 

 

Description

267 MHz

250 MHz

200 MHz

167 MHz

Unit

Parameter

Parameter

 

 

 

 

 

Min

Max

Min

Max

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

tCHQV

C/C

Clock Rise (or K/K in single clock mode) to

–

0.45

–

0.45

–

0.45

–

0.50

ns

 

 

 

 

Data Valid

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tDOH

tCHQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Data Output Hold after Output C/C

Clock Rise

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

 

 

 

 

(Active to Active)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCCQO

tCHCQV

 

 

Clock Rise to Echo Clock Valid

–

0.45

–

0.45

–

0.45

–

0.50

ns

C/C

tCQOH

tCHCQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Echo Clock Hold after C/C

Clock Rise

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

tCQD

tCQHQV

Echo Clock High to Data Valid

–

0.27

–

0.30

–

0.35

–

0.40

ns

tCQDOH

tCQHQX

Echo Clock High to Data Invalid

–0.27

–

–0.30

–

–0.35

–

–0.40

–

ns

tCQH

tCQHCQL

 

 

 

 

 

 

 

 

 

HIGH [24]

1.43

–

1.55

–

1.95

–

2.45

–

ns

Output Clock (CQ/CQ)

tCQHCQH

 

tCQHCQH

 

CQ Clock Rise to

 

 

Clock Rise

1.43

–

1.55

–

1.95

–

2.45

–

ns

 

 

CQ

 

 

 

 

(rising edge to rising edge) [24]

 

 

 

 

 

 

 

 

 

tCHZ

tCHQZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock (C/C)

Rise to High-Z

–

0.45

–

0.45

–

0.45

–

0.50

ns

 

 

 

 

(Active to High-Z) [25, 26]

 

 

 

 

 

 

 

 

 

tCLZ

tCHQX1

 

 

 

 

 

Rise to Low-Z [25, 26]

 

 

 

 

 

 

 

 

 

Clock (C/C)

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

DLL Timing

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKC Var

tKC Var

Clock Phase Jitter

–

0.20

–

0.20

–

0.20

–

0.20

ns

tKC lock

tKC lock

DLL Lock Time (K, C)

1024

–

1024

–

1024

–

1024

–

Cycles

tKC Reset

tKC Reset

K Static to DLL Reset

30

–

30

–

30

–

30

–

ns

Notes

24.These parameters are extrapolated from the input timing parameters (tKHKH - 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (tKC Var) is already included in the tKHKH). These parameters are only guaranteed by design and are not tested in production.

25.tCHZ, tCLZ are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms. Transition is measured ±100 mV from steady-state voltage.

26.At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.

Document Number: 001-07160 Rev. *E

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Cypress CY7C1318CV18, CY7C1320CV18, CY7C1316CV18, CY7C1916CV18 manual Parameter Min Max Output Times, DLL Timing
Page 23 Page 25

CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, CY7C1318CV18 specifications

Cypress Semiconductor, a leading provider of high-performance memory solutions, offers a range of Static Random-Access Memory (SRAM) products ideal for various applications. Among these are the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18, each designed to meet the demands of modern electronic systems with distinctive features, technologies, and characteristics.

The CY7C1320CV18 is a high-performance 2-Mbit SRAM that operates at a voltage of 1.8V. Designed with speed in mind, it has access times as low as 12 ns, making it suitable for applications requiring quick data retrieval. The device features a simple asynchronous interface, allowing it to be easily integrated into various circuits. With a low power consumption profile and the ability to operate under a wide temperature range, the CY7C1320CV18 is an ideal choice for battery-operated devices and industrial environments.

Following closely, the CY7C1916CV18 is a highly integrated, 16-Mbit synchronous SRAM. This device stands out due to its robust data transfer capabilities, supporting a single-cycle read and write operation, which greatly enhances system performance. The device operates with a supply voltage of 1.8V and features an impressive latency, making it perfect for high-speed applications such as digital signal processing and telecommunications. The unique pipelined architecture allows for higher throughput and efficiency in memory access.

The CY7C1316CV18 is another notable member of this family, featuring 16K x 8 bits of memory. It is characterized by low power consumption and a fast access time, which helps to reduce latency in critical applications. With a simple asynchronous interface and competitive pricing, the CY7C1316CV18 is suitable for consumer electronics and automotive applications that require reliable performance.

Lastly, the CY7C1318CV18 is a comprehensive solution featuring 32K x 8 bits of memory. This device also operates with low power and high speed, making it efficient for caching, buffering, and temporary storage applications. Its compatibility with industry standards makes it easily integrable into existing systems.

In summary, the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18 SRAM devices from Cypress Semiconductor showcase cutting-edge technology, high performance, and versatility, catering to the evolving needs of today's electronics, from telecommunications to consumer devices. Their low power consumption, high-speed access, and reliable data integrity make them essential components in modern electronic designs.
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