Cypress CY7C1332AV25 manual Switching Characteristics 18, 19, 20, Preliminary, CY7C1330AV25

Models: CY7C1332AV25 CY7C1330AV25

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Switching Characteristics[18, 19, 20, 21]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1330AV25

 

 

 

 

 

 

 

 

 

 

 

PRELIMINARY

 

CY7C1332AV25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching Characteristics[18, 19, 20, 21]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

250

 

 

200

 

 

Parameter

 

 

 

 

 

 

 

 

 

Description

 

 

 

 

 

Unit

 

 

 

 

 

 

 

 

 

 

Min.

 

Max.

Min.

 

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

V

CC

(typical) to the First Access Read or Write[22]

1

 

 

1

 

 

ms

 

Power

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

4.0

 

 

5.0

 

 

ns

 

FMAX

 

Maximum Operating Frequency

 

 

250

 

 

200

MHz

 

tCH

 

Clock HIGH

1.5

 

 

1.5

 

 

ns

 

tCL

 

Clock LOW

1.5

 

 

1.5

 

 

ns

 

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

 

Data Output Valid After CLK Rise

 

 

2.0

 

 

2.25

ns

 

tEOV

 

 

 

 

LOW to Output Valid[17, 19, 21]

 

 

2.0

 

 

2.25

ns

 

OE

 

 

 

 

tDOH

 

Data Output Hold After CLK Rise

0.5

 

 

0.5

 

 

ns

 

tCHZ

 

Clock to High-Z[17, 18, 19, 20, 21]

 

 

2.0

 

 

2.25

ns

 

t

 

Clock to Low-Z[17, 18, 19, 20, 21]

0.5

 

 

0.5

 

 

ns

 

CLZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

HIGH to Output High-Z[18, 19, 21]

 

 

2.0

 

 

2.25

ns

 

OE

 

 

 

 

EOHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tEOLZ

 

 

 

 

LOW to Output Low-Z[18, 19, 21]

0.5

 

 

0.5

 

 

ns

 

OE

 

 

 

 

Set-Up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-Up Before CLK Rise

0.3

 

 

0.3

 

 

ns

 

tDS

 

Data Input Set-Up Before CLK Rise

0.3

 

 

0.3

 

 

ns

 

tWES

 

 

 

 

 

 

 

x Set-Up Before CLK Rise

0.3

 

 

0.3

 

 

ns

 

WE,

BWS

 

 

 

 

tCES

 

Chip Select Set-Up

0.3

 

 

0.3

 

 

ns

 

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold After CLK Rise

0.6

 

 

0.6

 

 

ns

 

tDH

 

Data Input Hold After CLK Rise

0.6

 

 

0.6

 

 

ns

 

tWEH

 

 

 

 

 

 

x Hold After CLK Rise

0.6

 

 

0.6

 

 

ns

 

WE,

BW

 

 

 

 

tCEH

 

Chip Select Hold After CLK Rise

0.6

 

 

0.6

 

 

ns

 

Notes:

19.tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.

20.At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

21.This parameter is sampled and not 100% tested.

22.This part has a voltage regulator that steps down the voltage internally; tPower is the time power needs to be supplied above VDD minimum initially before a read or write operation can be initiated.

Document No: 001-07844 Rev. *A

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Cypress CY7C1332AV25 manual Switching Characteristics 18, 19, 20, Preliminary, CY7C1330AV25