CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Truth Table

The truth table for CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and CY7C1514KV18 follow. [2, 3, 4, 5, 6, 7]

Operation

K

RPS

 

 

WPS

DQ

DQ

Write Cycle:

 

 

L-H

X

 

 

L

D(A + 0) at K(t)

D(A + 1) at

 

 

 

 

K(t)

Load address on the rising edge of

K;

 

 

 

 

 

 

 

 

 

 

 

input write data on K and K rising edges.

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L

 

 

X

Q(A + 0) at

 

 

Q(A + 1) at C(t + 2)

 

 

C(t + 1)

Load address on the rising edge of K;

 

 

 

 

 

 

 

 

 

 

 

wait one and a half cycle; read data on

C

and C rising edges.

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

 

 

H

D = X

D = X

 

 

 

 

 

 

 

 

 

 

Q = High-Z

Q = High-Z

Standby: Clock Stopped

Stopped

X

 

 

X

Previous State

Previous State

Write Cycle Descriptions

The write cycle description table for CY7C1510KV18 and CY7C1512KV18 follow. [2, 8]

 

BWS0/

BWS1/

K

 

 

 

Comments

 

 

 

 

K

 

 

 

 

 

 

 

 

 

 

 

 

NWS0

 

NWS1

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

L–H

 

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1510KV18 both nibbles (D[7:0]) are written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

L

L-H

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1510KV18 both nibbles (D[7:0]) are written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

H

L–H

 

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1510KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

L

 

H

L–H

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1510KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

H

 

L

L–H

 

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1510KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

remains unaltered.

 

H

 

L

L–H

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1510KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

remains unaltered.

 

H

 

H

L–H

 

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

H

 

H

L–H

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected with the outputs in a tristate condition.

4.“A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.

5.“t” represents the cycle at which a read/write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.Ensure that when the clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved.

Document Number: 001-00436 Rev. *E

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Cypress CY7C1512KV18, CY7C1514KV18, CY7C1510KV18, CY7C1525KV18 Truth Table, Write Cycle Descriptions, Operation, Comments

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.