CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with Power Applied.. –55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +2.9V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC Applied to Outputs in High-Z

–0.5V to VDDQ + 0.5V

DC Input Voltage [11]

–0.5V to V + 0.5V

 

 

DD

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage (MIL-STD-883, M. 3015)..

> 2001V

Latch up Current

....................................................

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

 

 

Ambient

VDD [15]

VDDQ [15]

Range

 

Temperature (TA)

Commercial

 

0°C to +70°C

1.8 ± 0.1V

1.4V to

 

 

 

 

VDD

Industrial

 

–40°C to +85°C

 

Electrical Characteristics

DC Electrical Characteristics

Over the Operating Range [12]

Parameter

Description

Test Conditions

 

Min

Typ

Max

Unit

VDD

Power Supply Voltage

 

 

 

1.7

1.8

1.9

V

VDDQ

IO Supply Voltage

 

 

 

1.4

1.5

VDD

V

VOH

Output HIGH Voltage

Note 16

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOL

Output LOW Voltage

Note 17

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOH(LOW)

Output HIGH Voltage

IOH = 0.1 mA, Nominal Impedance

 

VDDQ – 0.2

 

VDDQ

V

VOL(LOW)

Output LOW Voltage

IOL = 0.1 mA, Nominal Impedance

 

VSS

 

0.2

V

VIH

Input HIGH Voltage

 

 

 

VREF + 0.1

 

VDDQ + 0.3

V

VIL

Input LOW Voltage

 

 

 

–0.3

 

VREF – 0.1

V

IX

Input Leakage Current

GND VI VDDQ

 

 

5

 

5

μA

IOZ

Output Leakage Current

GND VI VDDQ, Output Disabled

 

5

 

5

μA

VREF

Input Reference Voltage [18]

Typical Value = 0.75V

 

 

0.68

0.75

0.95

V

IDD [19]

VDD Operating Supply

VDD = Max,

333 MHz

(x8)

 

 

790

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

(x9)

 

 

790

 

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

 

 

(x18)

 

 

810

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

990

 

 

 

 

 

 

 

 

 

 

 

 

 

300 MHz

(x8)

 

 

730

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

730

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

750

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

910

 

 

 

 

 

 

 

 

 

 

 

 

 

250 MHz

(x8)

 

 

640

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

640

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

650

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

790

 

 

 

 

 

 

 

 

 

 

Notes

15.Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

16.Output are impedance controlled. IOH = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.

17.Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.

18.VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller.

19.The operation current is calculated with 50% read cycle and 50% write cycle.

Document Number: 001-00436 Rev. *E

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Cypress CY7C1514KV18, CY7C1510KV18, CY7C1512KV18 manual Maximum Ratings, Operating Range, DC Electrical Characteristics

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.