CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Switching Characteristics

Over the Operating Range [20, 21]

 

Cypress

Consortium

 

 

Description

333 MHz

300 MHz

250 MHz

200 MHz

167 MHz

Unit

Parameter

Parameter

 

 

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

POWER

 

V (Typical) to the First Access [22]

1

 

1

 

1

 

1

 

1

 

ms

 

 

DD

 

 

 

 

 

 

 

 

 

 

 

tCYC

tKHKH

K Clock and C Clock Cycle Time

3.0

8.4

3.3

8.4

4.0

8.4

5.0

8.4

6.0

8.4

ns

tKH

tKHKL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K;

 

C/C) HIGH

1.20

–

1.32

–

1.6

–

2.0

–

2.4

–

ns

tKL

tKLKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K;

 

C/C) LOW

1.20

–

1.32

–

1.6

–

2.0

–

2.4

–

ns

tKHKH

tKHKH

K Clock Rise to

 

 

Clock Rise and C

1.35

–

1.49

–

1.8

–

2.2

–

2.7

–

ns

K

 

 

 

to C Rise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(rising edge to rising edge)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKHCH

tKHCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K/K

Clock Rise to C/C Clock Rise

0

1.30

0

1.45

0

1.8

0

2.2

0

2.7

ns

 

 

 

(rising edge to rising edge)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSA

tAVKH

Address Setup to K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

tSC

tIVKH

Control Setup to K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

 

 

 

(RPS, WPS)

 

 

 

 

 

 

 

 

 

 

 

tSCDDR

tIVKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

DDR Control Setup to Clock (K/K

)

 

 

 

 

Rise (BWS0, BWS1, BWS2, BWS3)

 

 

 

 

 

 

 

 

 

 

 

tSD

tDVKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D[X:0] Setup to Clock (K/K)

 

Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHA

tKHAX

Address Hold after K Clock Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

tHC

tKHIX

Control Hold after K Clock Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

 

 

 

(RPS, WPS)

 

 

 

 

 

 

 

 

 

 

 

tHCDDR

tKHIX

DDR Control Hold after Clock (K/

 

 

 

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

K)

 

 

 

Rise (BWS0, BWS1, BWS2, BWS3)

 

 

 

 

 

 

 

 

 

 

 

tHD

tKHDX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

D[X:0] Hold after Clock (K/K)

Notes

21.When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is operated and outputs data with the output timings of that frequency range.

22.This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before initiating a read or write operation.

Document Number: 001-00436 Rev. *E

Page 23 of 30

[+] Feedback

Page 22 Page 24
Page 23
Image 23
Cypress CY7C1525KV18, CY7C1514KV18, CY7C1510KV18 manual Switching Characteristics, Parameter Min Max, High, Low, Rps, Wps
Page 22 Page 24

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.
Top Page Image Contents