CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Electrical Characteristics (continued)

DC Electrical Characteristics

Over the Operating Range [12]

Parameter

Description

Test Conditions

 

Min

Typ

Max

Unit

IDD [19]

VDD Operating Supply

VDD = Max,

200 MHz

(x8)

 

 

540

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

(x9)

 

 

540

 

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

 

 

(x18)

 

 

550

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

660

 

 

 

 

 

 

 

 

 

 

 

 

 

167 MHz

(x8)

 

 

480

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

480

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

490

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

580

 

 

 

 

 

 

 

 

 

 

ISB1

Automatic Power Down

Max VDD,

333 MHz

(x8)

 

 

290

mA

 

Current

Both Ports Deselected,

 

 

 

 

 

 

 

 

(x9)

 

 

290

 

 

 

VIN VIH or VIN VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tCYC,

 

(x18)

 

 

290

 

 

 

Inputs Static

 

 

 

 

 

 

 

 

 

(x36)

 

 

290

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

300 MHz

(x8)

 

 

280

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

280

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

280

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

280

 

 

 

 

 

 

 

 

 

 

 

 

 

250 MHz

(x8)

 

 

270

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

270

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

270

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

270

 

 

 

 

 

 

 

 

 

 

 

 

 

200 MHz

(x8)

 

 

250

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

250

 

 

 

 

 

 

 

 

 

 

 

 

 

167 MHz

(x8)

 

 

250

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

250

 

 

 

 

 

 

 

 

 

 

AC Electrical Characteristics

Over the Operating Range [11]

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

VIH

Input HIGH Voltage

 

VREF + 0.2

V

VIL

Input LOW Voltage

 

VREF – 0.2

V

Document Number: 001-00436 Rev. *E

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Cypress CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 manual AC Electrical Characteristics, Input High Voltage Vref +

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.