CY7C1510KV18, CY7C1525KV18

 

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18, CY7C1514KV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Name

I/O

 

 

 

Pin Description

 

 

D[x:0]

Input-

Data Input Signals. Sampled on the rising edge of K and

 

clocks during valid write operations.

 

K

 

 

 

 

 

 

Synchronous

CY7C1510KV18 D[7:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1525KV18 D[8:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 D[17:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1514KV18 D[35:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Write Port Select Active LOW. Sampled on the rising edge of the K clock. When asserted active, a

 

 

WPS

 

 

 

 

 

 

Synchronous

write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].

 

 

 

 

 

0,

Input-

Nibble Write Select 0, 1 Active LOW (CY7C1510KV18 Only). Sampled on the rising edge of the K

 

 

NWS

 

 

NWS1

Synchronous

and K clocks during write operations. Used to select which nibble is written into the device during the

 

 

 

 

 

 

 

current portion of the write operations. Nibbles not written remain unaltered.

 

 

 

 

 

 

 

NWS0 controls D[3:0] and NWS1 controls D[7:4].

 

 

 

 

 

 

 

All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select

 

 

 

 

 

 

 

ignores the corresponding nibble of data and it is not written into the device.

 

 

 

 

0,

Input-

Byte Write Select 0, 1, 2, and 3 Active LOW. Sampled on the rising edge of the K and

 

 

clocks during

 

 

BWS

K

 

 

BWS1,

Synchronous

write operations. Used to select which byte is written into the device during the current portion of the write

 

 

BWS2,

 

operations. Bytes not written remain unaltered.

 

 

BWS3

 

CY7C1525KV18 BWS0

controls D[8:0].

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 BWS0

controls D[8:0] and BWS1 controls D

[17:9].

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1514KV18 BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls

 

 

 

 

 

 

 

D[35:27].

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select

 

 

 

 

 

 

 

ignores the corresponding byte of data and it is not written into the device.

 

 

A

Input-

Address Inputs. Sampled on the rising edge of the K (read address) and

 

(write address) clocks during

 

 

K

 

 

 

 

 

 

Synchronous

active read and write operations. These address inputs are multiplexed for both read and write operations.

 

 

 

 

 

 

 

Internally, the device is organized as 8M x 8 (2 arrays each of 4M x 8) for CY7C1510KV18, 8M x 9

 

 

 

 

 

 

 

(2 arrays each of 4M x 9) for CY7C1525KV18, 4M x 18 (2 arrays each of 2M x 18) for CY7C1512KV18,

 

 

 

 

 

 

 

and 2M x 36 (2 arrays each of 1M x 36) for CY7C1514KV18. Therefore, only 22 address inputs are needed

 

 

 

 

 

 

 

to access the entire memory array of CY7C1510KV18 and CY7C1525KV18, 21 address inputs for

 

 

 

 

 

 

 

CY7C1512KV18, and 20 address inputs for CY7C1514KV18. These inputs are ignored when the appro-

 

 

 

 

 

 

 

priate port is deselected.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q[x:0]

Output-

Data Output Signals. These pins drive out the requested data during a read operation. Valid data is

 

 

 

 

 

 

Synchronous

driven out on the rising edge of the C and C clocks during read operations, or K and K when in single

 

 

 

 

 

 

 

clock mode. When the read port is deselected, Q[x:0] are automatically tristated.

 

 

 

 

 

 

 

CY7C1510KV18 Q[7:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1525KV18 Q[8:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18 Q[17:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1514KV18 Q[35:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Read Port Select Active LOW. Sampled on the rising edge of positive input clock (K). When active, a

 

 

RPS

 

 

 

 

 

 

Synchronous

read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is

 

 

 

 

 

 

 

allowed to complete and the output drivers are automatically tristated following the next rising edge of the

 

 

 

 

 

 

 

C clock. Each read access consists of a burst of two sequential transfers.

 

CInput Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. Use C and C together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 9 for further details.

CInput Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. Use C and C together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 9 for further details.

K

Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device

 

and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising

 

edge of K.

KInput Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0] when in single clock mode.

Document Number: 001-00436 Rev. *E

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Cypress CY7C1512KV18, CY7C1514KV18, CY7C1510KV18, CY7C1525KV18 manual Pin Definitions, Pin Name Pin Description

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.