S3C2440A RISC MICROPROCESSOR ELECTRICAL DATA
27-3
D.C. ELECTRICAL CHARACTERISTICS
Table 27-3 and 27-4 defines the DC electrical characteristics for the standard LVCMOS I/O buffer s.
Table 27-3 Normal I/O PAD DC Electrical Characteristics
Normal I/O PAD DC Electrical Characteristics for Memory (VDDMOP = 2.5V±
±±
±0.2V, TA = -40 to 85 °
°°
°C)
Symbol Parameters Condition Min T yp. Max Unit
High level input voltage
VIH LVCMOS interface 1.7 V
Low level input voltage
VIL LVCMOS interface 0.7 V
VT Switching threshold 0.5VDD V
VT+ Schmitt trigger, positive-going threshold CMOS 2.0 V
VT- Schmitt trigger, negative-going threshold CMOS 0.8 V
High level input current
IIH Input buffer VIN = VDD -10 10 µA
Low level input current
Input buffer VIN = VSS -10 10
IIL
Input buffer with pull-up -60 -33 -10
µA
High level output voltage
Type B4 to B12 IOH= - 1 µA VDD -0.05
Type B4 IOH= - 4 mA
Type B6 IOH= - 6 mA
Type B8 IOH= - 8 mA
Type B10 IOH= -10 mA
VOH
Type B12 IOH = -12 mA
2.0
V
Low level output voltage
Type B4 to B12 IOL= 1 µA 0.05
Type B4 IOL = 4 mA
Type B6 IOL = 6 mA
Type B8 IOL = 8 mA
Type B10 IOL = 10 mA
VOL
Type B12 IOL = 12 mA
0.4
V
NOTES:
1. Type B6 means 6mA output driver cell.
2. Type B8 means 8mA output driver cell.