Cypress CY7C1510KV18, CY7C1514KV18 manual Features, Configurations, Functional Description

CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18

72-Mbit QDR™-II SRAM 2-Word Burst Architecture

Features

■Separate Independent Read and Write Data Ports

❐Supports concurrent transactions

■333 MHz Clock for High Bandwidth

■2-word Burst on all Accesses

■Double Data Rate (DDR) Interfaces on both Read and Write Ports (data transferred at 666 MHz) at 333 MHz

■Two Input Clocks (K and K) for precise DDR timing

❐SRAM uses rising edges only

■Two Input Clocks for Output Data (C and C) to minimize Clock Skew and Flight Time mismatches

■Echo Clocks (CQ and CQ) simplify Data Capture in High Speed Systems

■Single Multiplexed Address Input bus latches Address Inputs for both Read and Write Ports

■Separate Port Selects for Depth Expansion

■Synchronous internally Self-timed Writes

■QDR™-II operates with 1.5 Cycle Read Latency when DOFF is asserted HIGH

■Operates similar to QDR-I Device with 1 Cycle Read Latency when DOFF is asserted LOW

■Available in x8, x9, x18, and x36 Configurations

■Full Data Coherency, providing Most Current Data

■Core VDD = 1.8V (±0.1V); IO VDDQ = 1.4V to VDD

❐Supports both 1.5V and 1.8V IO supply

■Available in 165-ball FBGA Package (13 x 15 x 1.4 mm)

■Offered in both Pb-free and non Pb-free Packages

■Variable Drive HSTL Output Buffers

■JTAG 1149.1 Compatible Test Access Port

■Phase Locked Loop (PLL) for Accurate Data Placement

Configurations

CY7C1510KV18 – 8M x 8

CY7C1525KV18 – 8M x 9

CY7C1512KV18 – 4M x 18

CY7C1514KV18 – 2M x 36

Functional Description

The CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and CY7C1514KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus that exists with common I/O devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with two 8-bit words (CY7C1510KV18), 9-bit words (CY7C1525KV18), 18-bit words (CY7C1512KV18), or 36-bit words (CY7C1514KV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus turnarounds.

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Table 1. Selection Guide

Description		333 MHz	300 MHz	250 MHz	200 MHz	167 MHz	Unit
Maximum Operating Frequency		333	300	250	200	167	MHz
Maximum Operating Current	x8	790	730	640	540	480	mA
	x9	790	730	640	540	480
	x18	810	750	650	550	490
	x36	990	910	790	660	580

Cypress Semiconductor Corporation • 198 Champion Court	•	San Jose, CA 95134-1709	•	408-943-2600
Document Number: 001-00436 Rev. *E		Revised March 30, 2009

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