Cypress CY7C1512KV18, CY7C1514KV18 manual Capacitance, Thermal Resistance Junction to Case

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CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Capacitance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V

2

pF

CO

Output Capacitance

 

3

pF

Thermal Resistance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

 

Test Conditions

165 FBGA

Unit

 

Package

 

 

 

 

 

ΘJA

Thermal Resistance

 

Test conditions follow standard test methods and

13.7

°C/W

 

(Junction to Ambient)

 

procedures for measuring thermal impedance, in

 

 

 

 

 

accordance with EIA/JESD51.

 

 

ΘJC

Thermal Resistance

 

3.73

°C/W

 

 

 

(Junction to Case)

 

 

 

 

 

 

 

 

 

 

 

 

Figure 4. AC Test Loads and Waveforms

 

 

VREF

 

 

 

 

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

Z0 = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

DEVICE

 

 

 

 

 

 

 

 

 

UNDER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TEST

 

 

 

 

 

 

 

 

 

 

 

 

 

ZQ

RQ = 250Ω

(a)

RL = 50Ω

VREF = 0.75V

 

 

 

 

 

 

 

 

 

VREF = 0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VREF

 

 

 

 

 

 

0.75V

 

 

 

 

 

R = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES[20]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DEVICE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF 0.25V

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

UNDER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SLEW RATE= 2 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

TEST ZQ

 

 

 

 

 

 

RQ =

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

250Ω

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note

20.Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads and Waveforms.

Document Number: 001-00436 Rev. *E

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Contents Functional Description FeaturesConfigurations Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1525KV18 Logic Block Diagram CY7C1510KV18Doff Logic Block Diagram CY7C1512KV18 Logic Block Diagram CY7C1514KV18CY7C1510KV18 8M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1525KV18 8M xWPS BWS CY7C1512KV18 4M xCY7C1514KV18 2M x Pin Definitions Pin Name Pin DescriptionReferenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Application ExampleSram #1 Operation Truth TableWrite Cycle Descriptions CommentsDevice Write cycle description table for CY7C1525KV18 followWrite cycle description table for CY7C1514KV18 follow Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPLL Constraints Power Up Sequence in QDR-II SramPower Up Sequence VDD/ Vddq DoffMaximum Ratings Electrical CharacteristicsDC Electrical Characteristics Operating RangeInput High Voltage Vref + AC Electrical CharacteristicsInput LOW Voltage Vref Document Number 001-00436 Rev. *E Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitHigh Switching CharacteristicsParameter Min Max LOWParameter Min Max Output Times PLL TimingSwitching Waveforms Read/Write/Deselect Sequence 26, 27Ordering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.
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