Cypress CY7C1525KV18 manual Power Up Sequence in QDR-II Sram, PLL Constraints, VDD/ Vddq Doff, Ddq

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CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18

Power Up Sequence in QDR-II SRAM

QDR-II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.

Power Up Sequence

■Apply power and drive DOFF either HIGH or LOW (All other inputs can be HIGH or LOW).

❐Apply VDD before VDDQ.

❐Apply VDDQ before VREF or at the same time as VREF.

❐Drive DOFF HIGH.

PLL Constraints

■PLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as tKC Var.

■The PLL functions at frequencies down to 120 MHz.

■If the input clock is unstable and the PLL is enabled, then the PLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide 20 μs of stable clock to relock to the desired clock frequency.

■Provide stable DOFF (HIGH), power and clock (K, K) for 20 μs to lock the PLL.

K

K

VDD/ VDDQ

DOFF

Figure 3. Power Up Waveforms

~ ~

 

~ ~

 

Unstable Clock

> 20Πs Stable clock

Start Normal

 

 

Operation

Clock Start (Clock Starts after VDD/ V DDQ Stable)

VDD/ V DDQ Stable (< +/- 0.1V DC per 50ns )

Fix HIGH (or tie to V )

DDQ

Document Number: 001-00436 Rev. *E

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesConfigurations Functional DescriptionLogic Block Diagram CY7C1525KV18 Logic Block Diagram CY7C1510KV18Doff Logic Block Diagram CY7C1514KV18 Logic Block Diagram CY7C1512KV18CY7C1525KV18 8M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1510KV18 8M xWPS BWS CY7C1512KV18 4M xCY7C1514KV18 2M x Pin Name Pin Description Pin DefinitionsTDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Echo Clocks Application ExampleSram #1 Comments Truth TableWrite Cycle Descriptions OperationInto the device. D359 remains unaltered Write cycle description table for CY7C1525KV18 followWrite cycle description table for CY7C1514KV18 follow DeviceIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderVDD/ Vddq Doff Power Up Sequence in QDR-II SramPower Up Sequence PLL ConstraintsOperating Range Electrical CharacteristicsDC Electrical Characteristics Maximum RatingsInput High Voltage Vref + AC Electrical CharacteristicsInput LOW Voltage Vref Document Number 001-00436 Rev. *E Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitLOW Switching CharacteristicsParameter Min Max HighPLL Timing Parameter Min Max Output TimesRead/Write/Deselect Sequence 26, 27 Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.
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