Cypress CY7C1525KV18 manual Switching Characteristics, Parameter Min Max, High, Low, Rps, Wps

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CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Switching Characteristics

Over the Operating Range [20, 21]

 

Cypress

Consortium

 

 

Description

333 MHz

300 MHz

250 MHz

200 MHz

167 MHz

Unit

Parameter

Parameter

 

 

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

POWER

 

V (Typical) to the First Access [22]

1

 

1

 

1

 

1

 

1

 

ms

 

 

DD

 

 

 

 

 

 

 

 

 

 

 

tCYC

tKHKH

K Clock and C Clock Cycle Time

3.0

8.4

3.3

8.4

4.0

8.4

5.0

8.4

6.0

8.4

ns

tKH

tKHKL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K;

 

C/C) HIGH

1.20

–

1.32

–

1.6

–

2.0

–

2.4

–

ns

tKL

tKLKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K;

 

C/C) LOW

1.20

–

1.32

–

1.6

–

2.0

–

2.4

–

ns

tKHKH

tKHKH

K Clock Rise to

 

 

Clock Rise and C

1.35

–

1.49

–

1.8

–

2.2

–

2.7

–

ns

K

 

 

 

to C Rise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(rising edge to rising edge)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKHCH

tKHCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K/K

Clock Rise to C/C Clock Rise

0

1.30

0

1.45

0

1.8

0

2.2

0

2.7

ns

 

 

 

(rising edge to rising edge)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSA

tAVKH

Address Setup to K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

tSC

tIVKH

Control Setup to K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

 

 

 

(RPS, WPS)

 

 

 

 

 

 

 

 

 

 

 

tSCDDR

tIVKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

DDR Control Setup to Clock (K/K

)

 

 

 

 

Rise (BWS0, BWS1, BWS2, BWS3)

 

 

 

 

 

 

 

 

 

 

 

tSD

tDVKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D[X:0] Setup to Clock (K/K)

 

Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHA

tKHAX

Address Hold after K Clock Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

tHC

tKHIX

Control Hold after K Clock Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

 

 

 

(RPS, WPS)

 

 

 

 

 

 

 

 

 

 

 

tHCDDR

tKHIX

DDR Control Hold after Clock (K/

 

 

 

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

K)

 

 

 

Rise (BWS0, BWS1, BWS2, BWS3)

 

 

 

 

 

 

 

 

 

 

 

tHD

tKHDX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

D[X:0] Hold after Clock (K/K)

Notes

21.When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is operated and outputs data with the output timings of that frequency range.

22.This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before initiating a read or write operation.

Document Number: 001-00436 Rev. *E

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesConfigurations Functional DescriptionDoff Logic Block Diagram CY7C1510KV18Logic Block Diagram CY7C1525KV18 Logic Block Diagram CY7C1514KV18 Logic Block Diagram CY7C1512KV18CY7C1525KV18 8M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1510KV18 8M xCY7C1514KV18 2M x CY7C1512KV18 4M xWPS BWS Pin Name Pin Description Pin DefinitionsTDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Sram #1 Application ExampleEcho Clocks Comments Truth TableWrite Cycle Descriptions OperationInto the device. D359 remains unaltered Write cycle description table for CY7C1525KV18 followWrite cycle description table for CY7C1514KV18 follow DeviceIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderVDD/ Vddq Doff Power Up Sequence in QDR-II SramPower Up Sequence PLL ConstraintsOperating Range Electrical CharacteristicsDC Electrical Characteristics Maximum RatingsInput LOW Voltage Vref Document Number 001-00436 Rev. *E AC Electrical CharacteristicsInput High Voltage Vref + Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitLOW Switching CharacteristicsParameter Min Max HighPLL Timing Parameter Min Max Output TimesRead/Write/Deselect Sequence 26, 27 Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.
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