Cypress CY7C1510KV18, CY7C1514KV18 manual Switching Waveforms, Read/Write/Deselect Sequence 26, 27

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CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Switching Waveforms

Figure 5. Read/Write/Deselect Sequence [26, 27, 28]

READ

WRITE

READ

WRITE

READ

WRITE

NOP

1

2

3

4

5

6

7

WRITE NOP

89

10

K

tKH

K

RPS

WPS

AA0 tSA

tKL

 

 

 

tCYC

 

 

tKHKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSC

tHC

A2

A3

tSA tHA

A6

D D10

D11

 

D30

 

 

 

tSD

Q

 

 

 

 

 

 

tCLZ

 

tKHCH

tKL

tCO

D50

Q00

D51

tSD tHD

Q01 Q20

tDOH tCQDOH

D61

Q21 Q40

tCQD

Q41

tCHZ

CtKH

tKHCH

tKHKH

 

tCYC

 

 

 

 

 

 

 

 

C

tCCQO

tCQOH

CQ

tCCQO

tCQOH

tCQH

tCQHCQH

CQ

CARE

UNDEFINED

Notes

26.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.

27.Outputs are disabled (High-Z) one clock cycle after a NOP.

28.In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.

Document Number: 001-00436 Rev. *E

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Contents Configurations FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1525KV18 Logic Block Diagram CY7C1510KV18Doff Logic Block Diagram CY7C1514KV18 Logic Block Diagram CY7C1512KV18Ball Fbga 13 x 15 x 1.4 mm Pinout Pin ConfigurationCY7C1510KV18 8M x CY7C1525KV18 8M xWPS BWS CY7C1512KV18 4M xCY7C1514KV18 2M x Pin Name Pin Description Pin DefinitionsPower Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Echo Clocks Application ExampleSram #1 Write Cycle Descriptions Truth TableOperation CommentsWrite cycle description table for CY7C1514KV18 follow Write cycle description table for CY7C1525KV18 followDevice Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence Power Up Sequence in QDR-II SramPLL Constraints VDD/ Vddq DoffDC Electrical Characteristics Electrical CharacteristicsMaximum Ratings Operating RangeInput High Voltage Vref + AC Electrical CharacteristicsInput LOW Voltage Vref Document Number 001-00436 Rev. *E Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max Switching CharacteristicsHigh LOWPLL Timing Parameter Min Max Output TimesRead/Write/Deselect Sequence 26, 27 Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.