Cypress CY7C1510KV18, CY7C1514KV18, CY7C1512KV18 manual Package Diagram, Ball Fbga 13 x 15 x 1.4 mm

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CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Package Diagram

Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180

15.00±0.10

TOP VIEW

PIN 1 CORNER

1.00

15.00±0.10	14.00

7.00

BOTTOM VIEW

PIN 1 CORNER

Ø0.05 M C

Ø0.25 M C A B

-0.06

Ø0.50 (165X)

+0.14

1.00

5.00

10.00

0.25 C

	B
0.53±0.05
0.36	C
0.36

13.00±0.10

		1.40MAX.

				0.15C

SEATING PLANE

0.35±0.06

B 13.00±0.10

0.15(4X)

NOTES :

SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)

PACKAGE WEIGHT : 0.475g

JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE CODE : BB0AC

51-85180-*A

Document Number: 001-00436 Rev. *E

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Contents Configurations FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtDoff Logic Block Diagram CY7C1510KV18Logic Block Diagram CY7C1525KV18 Logic Block Diagram CY7C1514KV18 Logic Block Diagram CY7C1512KV18Ball Fbga 13 x 15 x 1.4 mm Pinout Pin ConfigurationCY7C1510KV18 8M x CY7C1525KV18 8M xCY7C1514KV18 2M x CY7C1512KV18 4M xWPS BWS Pin Name Pin Description Pin DefinitionsPower Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Sram #1 Application ExampleEcho Clocks Write Cycle Descriptions Truth TableOperation CommentsWrite cycle description table for CY7C1514KV18 follow Write cycle description table for CY7C1525KV18 followDevice Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence Power Up Sequence in QDR-II SramPLL Constraints VDD/ Vddq DoffDC Electrical Characteristics Electrical CharacteristicsMaximum Ratings Operating RangeInput LOW Voltage Vref Document Number 001-00436 Rev. *E AC Electrical CharacteristicsInput High Voltage Vref + Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max Switching CharacteristicsHigh LOWPLL Timing Parameter Min Max Output TimesRead/Write/Deselect Sequence 26, 27 Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.