Cypress CY7C1512KV18, CY7C1514KV18, CY7C1510KV18, CY7C1525KV18 manual Ordering Information

Page 26

CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Ordering Information

The following table lists all possible speed, package, and temperature range options supported for these devices. Note that some options listed may not be available for order entry. To verify the availability of a specific option, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products or contact your local sales representative for the status of availability of parts.

Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://app.cypress.com/portal/server.pt?space=CommunityPage&control=SetCommunity&CommunityID= 201&PageID=230.

Table 2. Ordering Information

Speed

Ordering Code

Package

Package Type

Operating

(MHz)

Diagram

Range

333

CY7C1510KV18-333BZC

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)

Commercial

 

 

 

 

 

 

CY7C1525KV18-333BZC

 

 

 

 

 

 

 

 

 

CY7C1512KV18-333BZC

 

 

 

 

 

 

 

 

 

CY7C1514KV18-333BZC

 

 

 

 

 

 

 

 

 

CY7C1510KV18-333BZXC

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free

 

 

 

 

 

 

 

CY7C1525KV18-333BZXC

 

 

 

 

 

 

 

 

 

CY7C1512KV18-333BZXC

 

 

 

 

 

 

 

 

 

CY7C1514KV18-333BZXC

 

 

 

 

 

 

 

 

 

CY7C1510KV18-333BZI

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)

Industrial

 

 

 

 

 

 

CY7C1525KV18-333BZI

 

 

 

 

 

 

 

 

 

CY7C1512KV18-333BZI

 

 

 

 

 

 

 

 

 

CY7C1514KV18-333BZI

 

 

 

 

 

 

 

 

 

CY7C1510KV18-333BZXI

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free

 

 

 

 

 

 

 

CY7C1525KV18-333BZXI

 

 

 

 

 

 

 

 

 

CY7C1512KV18-333BZXI

 

 

 

 

 

 

 

 

 

CY7C1514KV18-333BZXI

 

 

 

 

 

 

 

 

300

CY7C1510KV18-300BZC

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)

Commercial

 

 

 

 

 

 

CY7C1525KV18-300BZC

 

 

 

 

 

 

 

 

 

CY7C1512KV18-300BZC

 

 

 

 

 

 

 

 

 

CY7C1514KV18-300BZC

 

 

 

 

 

 

 

 

 

CY7C1510KV18-300BZXC

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free

 

 

 

 

 

 

 

CY7C1525KV18-300BZXC

 

 

 

 

 

 

 

 

 

CY7C1512KV18-300BZXC

 

 

 

 

 

 

 

 

 

CY7C1514KV18-300BZXC

 

 

 

 

 

 

 

 

 

CY7C1510KV18-300BZI

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)

Industrial

 

 

 

 

 

 

CY7C1525KV18-300BZI

 

 

 

 

 

 

 

 

 

CY7C1512KV18-300BZI

 

 

 

 

 

 

 

 

 

CY7C1514KV18-300BZI

 

 

 

 

 

 

 

 

 

CY7C1510KV18-300BZXI

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free

 

 

 

 

 

 

 

CY7C1525KV18-300BZXI

 

 

 

 

 

 

 

 

 

CY7C1512KV18-300BZXI

 

 

 

 

 

 

 

 

 

CY7C1514KV18-300BZXI

 

 

 

 

 

 

 

 

Document Number: 001-00436 Rev. *E

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Contents Functional Description FeaturesConfigurations Cypress Semiconductor Corporation 198 Champion CourtDoff Logic Block Diagram CY7C1510KV18Logic Block Diagram CY7C1525KV18 Logic Block Diagram CY7C1512KV18 Logic Block Diagram CY7C1514KV18CY7C1510KV18 8M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1525KV18 8M xCY7C1514KV18 2M x CY7C1512KV18 4M xWPS BWS Pin Definitions Pin Name Pin DescriptionReferenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Sram #1 Application ExampleEcho Clocks Operation Truth TableWrite Cycle Descriptions CommentsDevice Write cycle description table for CY7C1525KV18 followWrite cycle description table for CY7C1514KV18 follow Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPLL Constraints Power Up Sequence in QDR-II SramPower Up Sequence VDD/ Vddq DoffMaximum Ratings Electrical CharacteristicsDC Electrical Characteristics Operating RangeInput LOW Voltage Vref Document Number 001-00436 Rev. *E AC Electrical CharacteristicsInput High Voltage Vref + Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitHigh Switching CharacteristicsParameter Min Max LOWParameter Min Max Output Times PLL TimingSwitching Waveforms Read/Write/Deselect Sequence 26, 27Ordering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.