Cypress CY7C1525KV18 Referenced with Respect to, TDO for Jtag, TCK Pin for Jtag, TDI Pin for Jtag

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CY7C1510KV18, CY7C1525KV18

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1512KV18, CY7C1514KV18

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions (continued)

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Name

I/O

 

 

 

 

 

 

 

 

Pin Description

 

CQ

Echo Clock

 

CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock

 

 

 

 

 

 

for output data (C) of the QDR-II. In single clock mode, CQ is generated with respect to K. The timing for

 

 

 

 

 

 

the echo clocks is shown in Switching Characteristics on page 23.

 

 

 

 

Echo Clock

 

 

Referenced with Respect to

 

. This is a free running clock and is synchronized to the input clock

 

CQ

 

 

 

CQ

C

 

 

 

 

 

 

for output data

(C)

of the QDR-II. In single clock mode, CQ is generated with respect to K. The timing for

 

 

 

 

 

 

the echo clocks is shown in the Switching Characteristics on page 23.

 

ZQ

Input

 

Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus

 

 

 

 

 

 

impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected

 

 

 

 

 

 

between ZQ and ground. Alternatively, connect this pin directly to VDDQ, which enables the minimum

 

 

 

 

 

 

impedance mode. This pin cannot be connected directly to GND or left unconnected.

 

 

 

 

Input

 

PLL Turn Off − Active LOW. Connecting this pin to ground turns off the PLL inside the device. The timing

 

DOFF

 

 

 

 

 

 

in the operation with the PLL turned off differs from those listed in this data sheet. For normal operation,

 

 

 

 

 

 

connect this pin to a pull up through a 10 KΩ or less pull up resistor. The device behaves in QDR-I mode

 

 

 

 

 

 

when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz

 

 

 

 

 

 

with QDR-I timing.

 

TDO

Output

 

TDO for JTAG.

 

 

 

 

 

 

TCK

Input

 

TCK Pin for JTAG.

 

 

 

 

 

 

TDI

Input

 

TDI Pin for JTAG.

 

 

 

 

 

 

TMS

Input

 

TMS Pin for JTAG.

 

 

 

 

 

 

NC

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/144M

Input

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/288M

Input

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

VREF

Input-

 

Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC

 

 

 

 

Reference

 

measurement points.

 

 

 

 

 

 

VDD

Power Supply

 

Power Supply Inputs to the Core of the Device.

 

VSS

Ground

 

Ground for the device.

 

VDDQ

Power Supply

 

Power Supply Inputs for the Outputs of the Device.

Document Number: 001-00436 Rev. *E

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesConfigurations Functional DescriptionLogic Block Diagram CY7C1525KV18 Logic Block Diagram CY7C1510KV18Doff Logic Block Diagram CY7C1514KV18 Logic Block Diagram CY7C1512KV18CY7C1525KV18 8M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1510KV18 8M xWPS BWS CY7C1512KV18 4M xCY7C1514KV18 2M x Pin Name Pin Description Pin DefinitionsTDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Echo Clocks Application ExampleSram #1 Comments Truth TableWrite Cycle Descriptions OperationInto the device. D359 remains unaltered Write cycle description table for CY7C1525KV18 followWrite cycle description table for CY7C1514KV18 follow DeviceIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderVDD/ Vddq Doff Power Up Sequence in QDR-II SramPower Up Sequence PLL ConstraintsOperating Range Electrical CharacteristicsDC Electrical Characteristics Maximum RatingsInput High Voltage Vref + AC Electrical CharacteristicsInput LOW Voltage Vref Document Number 001-00436 Rev. *E Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitLOW Switching CharacteristicsParameter Min Max HighPLL Timing Parameter Min Max Output TimesRead/Write/Deselect Sequence 26, 27 Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History

CY7C1510KV18, CY7C1514KV18, CY7C1512KV18, CY7C1525KV18 specifications

Cypress Semiconductor, a leading player in the memory solutions market, has developed a range of high-performance memory components, notably the CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18. These devices are part of the company's advanced SRAM family and are noteworthy for their speed, efficiency, and flexibility in various applications.

The CY7C1525KV18 is a 2Mb asynchronous SRAM that boasts low latency and high-speed performance, making it ideal for applications that require fast data access and processing. It features a 1.8V operation, which significantly contributes to its power efficiency, an essential factor in today's energy-conscious designs. The architecture of the CY7C1525KV18 employs a dual-port configuration, enabling simultaneous read and write operations, which enhances the system performance in multi-threaded environments.

Similar in design but tailored for different capacities, the CY7C1512KV18 and CY7C1514KV18 deliver 1.5Mb and 1Mb memory density, respectively. Both chips are built with advanced CMOS technology, ensuring low power consumption and high-speed access times that reach up to 66 MHz. Such speed allows them to support high-performance applications, including networking equipment, telecom systems, and automotive electronics.

The CY7C1510KV18, meanwhile, offers a lower memory capacity at 512Kb but retains the key performance traits of its higher-capacity counterparts. It is particularly well-suited for applications where space is at a premium yet where high-speed data processing is still crucial.

All four SRAM devices are characterized by their fast access times, which can be as low as 10 ns, making them highly effective in environments that require real-time data handling. Moreover, their low standby and active power consumption aligns with the growing demand for energy-efficient solutions in modern electronics.

Additionally, these products come with a variety of packaging options to fit diverse application requirements, enhancing their versatility across industrial, automotive, and consumer electronics sectors. The combination of speed, efficiency, and flexible configurations renders the Cypress CY7C1525KV18, CY7C1512KV18, CY7C1514KV18, and CY7C1510KV18 an excellent choice for engineers seeking reliable high-performance memory solutions.
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