Cypress CY7C1393CV18 manual Application Example, Shows four DDR-II SIO used in an application

Page 9

CY7C1392CV18, CY7C1992CV18 CY7C1393CV18, CY7C1394CV18

synchronized to the output clock of the DDR-II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timing for the echo clocks is shown in Switching Characteristics on page 23.

DLL

These chips use a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the

DLL is locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary to reset the DLL to lock it to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented. The DLL may be disabled by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in DDR-I mode (with one cycle latency and a longer access time). For information refer to the application note DLL Considerations in QDRII™/DDRII.

Application Example

Figure 1 shows four DDR-II SIO used in an application.

Figure 1. Application Example

 

DATA IN

 

DATA OUT

 

Address

 

LD#

 

R/W#

BUS

BWS#

 

MASTER

SRAM 1 Input CQ

(CPU

SRAM 1 Input CQ#

or

SRAM 4 Input CQ

SRAM 4 Input CQ#

ASIC)

 

 

Source K

 

Source K#

 

Delayed K

 

Delayed K#

 

 

 

SRAM 1

 

 

 

ZQ

 

 

SRAM 4

 

 

 

ZQ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

 

 

 

Q

R = 250Ohms

 

 

B

 

 

 

Q

Vt

 

 

 

 

 

 

CQ

 

 

 

 

 

CQ

 

 

 

W

 

 

 

 

 

 

W

 

 

 

 

D

LD R/W

B

 

 

 

CQ#

D

LD R/W

 

 

 

CQ#

 

S

 

 

 

S

 

 

 

R

A

LD R/W W

 

 

 

 

A

#

#

#

 

 

 

 

#

#

#

C

C#

K

K#

C

C#

K

K#

 

 

#

#

#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vt

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vt

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

 

 

 

R

R = 50Ohms

Vt = VREF

 

 

 

 

 

 

 

 

 

 

 

 

R = 250Ohms

Document #: 001-07162 Rev. *C

Page 9 of 30

[+] Feedback

Image 9
Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1392CV18 CLKDoff Logic Block Diagram CY7C1394CV18 Logic Block Diagram CY7C1393CV18512K Array Gen Read Data Reg ControlBall Fbga 13 x 15 x 1.4 mm Pinout Pin ConfigurationCY7C1392CV18 2M x CY7C1992CV18 2M xCY7C1394CV18 512K x CY7C1393CV18 1M xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write input. When Power supply inputs for the outputs of the device Power supply inputs to the core of the deviceIs referenced with respect to TDO for JtagFunctional Overview Shows four DDR-II SIO used in an application Application ExampleWrite Cycle Descriptions Truth TableOperation CommentsWrite cycle description table for CY7C1394CV18 follows Write cycle description table for CY7C1992CV18 followsDevice Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Input High Voltage Vref +Input LOW Voltage Vref Document # 001-07162 Rev. *C Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max Switching CharacteristicsHigh LOWDLL Timing Parameter Min Max Output TimesBurst Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsDocument History