Cypress CY7C1350G manual Pin Configurations Ball BGA Pinout, Pin Definitions, Name Description

Page 3

CY7C1350G

Pin Configurations (continued)

119-Ball BGA Pinout

 

1

2

3

 

4

 

 

 

 

 

5

 

 

6

 

7

A

VDDQ

A

 

A

NC/18M

 

A

 

A

VDDQ

B

NC/576M

CE2

 

A

 

 

 

 

 

 

 

 

 

 

A

 

 

 

NC

ADV/LD

 

 

 

CE3

C

NC/1G

A

 

A

 

 

VDD

 

A

 

A

NC

D

DQC

DQPC

 

VSS

 

 

 

NC

 

VSS

DQPB

DQB

E

DQC

DQC

 

VSS

 

 

 

 

1

 

 

VSS

DQB

DQB

 

 

CE

F

VDDQ

DQC

 

VSS

 

 

 

 

 

 

 

 

VSS

DQB

VDDQ

 

 

 

OE

G

DQC

DQC

 

 

C

NC/9M

 

 

B

DQB

DQB

 

BW

BW

H

DQC

DQC

 

VSS

 

 

 

 

 

 

VSS

DQB

DQB

 

 

 

WE

J

VDDQ

VDD

 

VSS

 

 

VDD

 

VSS

 

VDD

VDDQ

K

DQD

DQD

 

VSS

 

CLK

 

VSS

DQA

DQA

L

DQD

DQD

 

 

D

 

 

 

NC

 

 

 

 

DQA

DQA

 

BW

 

 

 

 

BW

A

M

VDDQ

DQD

 

VSS

 

 

 

 

VSS

DQA

VDDQ

 

 

CEN

 

N

DQD

DQD

 

VSS

 

 

 

A1

 

VSS

DQA

DQA

P

DQD

DQPD

 

VSS

 

 

 

A0

 

VSS

DQPA

DQA

R

NC/144M

A

MODE

 

 

VDD

 

NC

 

A

NC/288M

T

NC

NC/72M

 

A

 

 

 

A

 

A

NC/36M

ZZ

U

VDDQ

NC

 

NC

 

 

 

NC

 

NC

 

NC

VDDQ

Pin Definitions

 

Name

I/O

Description

 

 

 

 

 

A0, A1, A

Input-

Address Inputs used to select one of the 128K address locations. Sampled at the rising edge

 

 

 

 

 

 

 

 

Synchronous

of the CLK. A[1:0] are fed to the two-bit burst counter.

 

 

 

 

[A:D]

Input-

Byte Write Inputs, active LOW. Qualified with

 

to conduct writes to the SRAM. Sampled on

 

BW

WE

 

 

 

 

 

 

 

 

Synchronous

the rising edge of CLK.

 

 

 

 

 

 

 

 

Input-

Write Enable Input, active LOW. Sampled on the rising edge of CLK if

 

is active LOW. This

 

WE

CEN

 

 

 

 

 

 

 

 

Synchronous

signal must be asserted LOW to initiate a write sequence.

 

 

 

 

 

 

 

 

Input-

Advance/Load Input. Used to advance the on-chip address counter or load a new address. When

 

ADV/LD

 

 

 

 

 

 

 

 

 

Synchronous

HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new

 

 

 

 

 

 

 

 

 

address can be loaded into the device for an access. After being deselected, ADV/LD should be

 

 

 

 

 

 

 

 

 

driven LOW in order to load a new address.

 

CLK

Input-Clock

Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with

 

 

 

 

 

CEN.

 

 

 

 

 

 

 

 

 

CLK is only recognized if CEN is active LOW.

 

 

1

 

Input-

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

CE

 

 

 

 

 

 

 

 

Synchronous

CE2 and CE3 to select/deselect the device.

 

CE2

Input-

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE3 to select/deselect the device.

 

 

3

 

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

CE

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE2 to select/deselect the device.

 

 

 

 

 

Input-

Output Enable, asynchronous input, active LOW. Combined with the synchronous logic block

 

OE

 

 

 

 

 

 

 

 

Asynchronous

inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to

 

 

 

 

 

 

 

 

 

behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins.

OE

 

 

 

 

 

 

 

 

 

 

is masked during the data portion of a write sequence, during the first clock when emerging from

 

 

 

 

 

 

 

 

 

a deselected state, when the device has been deselected.

 

 

 

 

 

 

Input-

Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the

 

CEN

 

 

 

 

 

 

 

 

Synchronous

SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not

 

 

 

 

 

 

 

 

 

deselect the device, CEN can be used to extend the previous cycle when required.

Document #: 38-05524 Rev. *F

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Contents Champion Court San Jose , CA Document # 38-05524 Rev. *F FeaturesLogic Block Diagram Cypress Semiconductor Corporation250 MHz 200 MHz 166 MHz 133 MHz 100 MHz Unit Pin ConfigurationsSelection Guide CY7C1350GByte Write Inputs, active LOW . Qualified with Pin Configurations Ball BGA PinoutPin Definitions Name DescriptionFunctional Overview Linear Burst Address Table Mode = GND Interleaved Burst Address Table Mode = Floating or VDDFunction ZZ Mode Electrical CharacteristicsPartial Truth Table for Read/Write 2, 3 Operation Address UsedAmbient Range Electrical Characteristics Over the Operating Range10Maximum Ratings Operating RangeParameter Description Test Conditions Tqfp 119 BGA Unit Max Capacitance12Thermal Resistance AC Test Loads and WaveformsSwitching Characteristics Over the Operating Range17 Address A1 A2 Switching WaveformsRead/Write Timing19, 20 CENNOP, STALL, and Deselect Cycles19, 20 ZZ Mode Timing23Ordering Information Pin Tqfp 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Document History Issue Orig. Description of Change Date