CY7C1350G
Pin Configurations (continued)
119-Ball BGA Pinout
| 1 | 2 | 3 |
| 4 |
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| 7 | ||||||
A | VDDQ | A |
| A | NC/18M |
| A |
| A | VDDQ | ||||||||||||
B | NC/576M | CE2 |
| A |
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| A |
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| NC | |||
ADV/LD |
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| CE3 | ||||||||||||||||||
C | NC/1G | A |
| A |
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| VDD |
| A |
| A | NC | ||||||||||
D | DQC | DQPC |
| VSS |
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| NC |
| VSS | DQPB | DQB | ||||||||||
E | DQC | DQC |
| VSS |
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| 1 |
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| VSS | DQB | DQB | ||||||||
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| CE | ||||||||||||||||||||
F | VDDQ | DQC |
| VSS |
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| VSS | DQB | VDDQ | |||||||
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| OE | |||||||||||||||||||
G | DQC | DQC |
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| C | NC/9M |
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| B | DQB | DQB | |||||||||||
| BW | BW | ||||||||||||||||||||
H | DQC | DQC |
| VSS |
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| VSS | DQB | DQB | |||||||||
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| WE | |||||||||||||||||||
J | VDDQ | VDD |
| VSS |
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| VDD |
| VSS |
| VDD | VDDQ | ||||||||||
K | DQD | DQD |
| VSS |
| CLK |
| VSS | DQA | DQA | ||||||||||||
L | DQD | DQD |
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| D |
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| NC |
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| DQA | DQA | |||||||
| BW |
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| BW | A | |||||||||||||||
M | VDDQ | DQD |
| VSS |
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| VSS | DQA | VDDQ | |||||||||||
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| CEN |
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N | DQD | DQD |
| VSS |
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| A1 |
| VSS | DQA | DQA | ||||||||||
P | DQD | DQPD |
| VSS |
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| A0 |
| VSS | DQPA | DQA | ||||||||||
R | NC/144M | A | MODE |
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| VDD |
| NC |
| A | NC/288M | |||||||||||
T | NC | NC/72M |
| A |
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| A |
| A | NC/36M | ZZ | ||||||||||
U | VDDQ | NC |
| NC |
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| NC |
| NC |
| NC | VDDQ |
Pin Definitions
| Name | I/O | Description | ||||||||||||||
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| A0, A1, A | Input- | Address Inputs used to select one of the 128K address locations. Sampled at the rising edge | ||||||||||||||
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| Synchronous | of the CLK. A[1:0] are fed to the | ||||||||
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| [A:D] | Input- | Byte Write Inputs, active LOW. Qualified with |
| to conduct writes to the SRAM. Sampled on | |||||||||
| BW | WE | |||||||||||||||
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| Synchronous | the rising edge of CLK. | ||||||||
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| Input- | Write Enable Input, active LOW. Sampled on the rising edge of CLK if |
| is active LOW. This | ||||||
| WE | CEN | |||||||||||||||
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| Synchronous | signal must be asserted LOW to initiate a write sequence. | ||||||||
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| Input- | Advance/Load Input. Used to advance the | ||||||||
| ADV/LD |
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| Synchronous | HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new | ||||||||
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| address can be loaded into the device for an access. After being deselected, ADV/LD should be | ||||||||
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| driven LOW in order to load a new address. | ||||||||
| CLK | Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with |
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| CEN. | ||||||||||||||||
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| CLK is only recognized if CEN is active LOW. | ||||||||
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| 1 |
| Input- | Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||||
| CE | ||||||||||||||||
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| Synchronous | CE2 and CE3 to select/deselect the device. | ||||||||
| CE2 | Input- | Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||||||
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| Synchronous | CE1 and CE3 to select/deselect the device. | ||||||||
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| 3 |
| Input- | Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||||
| CE | ||||||||||||||||
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| Synchronous | CE1 and CE2 to select/deselect the device. | ||||||||
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| Input- | Output Enable, asynchronous input, active LOW. Combined with the synchronous logic block | |||||||||||
| OE | ||||||||||||||||
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| Asynchronous | inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to | ||||||||
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| behave as outputs. When deasserted HIGH, I/O pins are | OE |
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| is masked during the data portion of a write sequence, during the first clock when emerging from | ||||||||
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| a deselected state, when the device has been deselected. | ||||||||
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| Input- | Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the | ||||||||||
| CEN | ||||||||||||||||
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| Synchronous | SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not | ||||||||
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| deselect the device, CEN can be used to extend the previous cycle when required. |
Document #: | Page 3 of 15 |
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