CY14B101L
Document Number: 001-06400 Rev. *I Page 8 of 18
Data Retention and Endurance
Parameter Description Min Unit
DATA
R
Data Retention at 55°C20Years
NV
C
Nonvolatile STORE Operations 200 K
Capacitance
In the following table, the capacitance parameters are listed.
[6]
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= 0 to 3.0V 7pF
C
OUT
Output Capacitance 7 pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
[6]
Parameter Description Test Conditions 32-SOIC 48-SSOP Unit
Θ
JA
Thermal Resistance
(Junction to Ambient) Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
33.64 32.9 °C/W
Θ
JC
Thermal Resistance
(Junction to Case) 13.6 16.35 °C/W
Figure 4. AC Test Loads
AC Test Conditions
3.0V
Output
30 pF
R1 577Ω
R2
789Ω
3.0V
Output
5 pF
R1 577
Ω
R2
789
Ω
For Tri-state Specs
Input Pulse Levels....................................................0V to 3V
Input Rise and Fall Times (10% to 90%)...................... <5 ns
Input and Output Timing Reference Levels.................... 1.5V
Note
6. These parameters are guaranteed by design and are not tested.
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