Data Retention and Endurance, Capacitance | Cypress CY14B101Q2

					CY14B101Q1
					CY14B101Q1
				PRELIMINARY	CY14B101Q2
				PRELIMINARY	CY14B101Q3


Data Retention and Endurance

Parameter				Description	Min			Unit
DATAR	Data Retention				20			Years
NVC	Nonvolatile STORE Operations				200			K
Capacitance

Parameter[6]	Description			Test Conditions	Max			Unit
CIN	Input Capacitance			TA = 25°C, f = 1MHz,	6			pF
				VCC = 3.0V
COUT	Output Pin Capacitance			VCC = 3.0V	8			pF
Thermal Resistance

Parameter [6]	Description			Test Conditions	8-SOIC		8-DFN	Unit
ΘJA	Thermal Resistance			Test conditions follow standard test	TBD		TBD	°C/W
	(Junction to Ambient)			methods and procedures for measuring
				thermal impedance, per EIA / JESD51.
ΘJC	Thermal Resistance			thermal impedance, per EIA / JESD51.	TBD		TBD	°C/W
	(Junction to Case)
			Figure 20. AC Test Loads and Waveforms

577Ω

3.0V

R1

OUTPUT

30 pF

	3.0V

	OUTPUT
R2	5 pF

789Ω

577Ω

R1

R2 789Ω

AC Test Conditions

Input Pulse Levels	0V to 3V
Input Rise and Fall Times (10% - 90%)	<3 ns
Input and Output Timing Reference Levels	1.5V

Note

6. These parameters are guaranteed by design and are not tested.

Document #: 001-50091 Rev. *A

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Cypress CY14B101Q2, CY14B101Q3 Data Retention and Endurance, Capacitance, Thermal Resistance, AC Test Conditions, Soic DFN

Contents

Functional Overview FeaturesLogic Block Diagram Mbit NonVolatile Sram Internally organized as 128K x Hold PinoutsPin Definitions Pin Name Type Description Sram Read Device OperationSram Write Store Operation Hardware Store and HSB pin Operation Hardware Recall Power UpSoftware Store Operation Recall Operation Serial Peripheral Interface SPI Overview System Configuration Using SPI nvSRAM SPI Modes SPI Operating Features SPI Functional Description Write Status Register Wrsr Instruction Status RegisterRead Status Register Rdsr Instruction Write Protection and Block Protection Write Enable Wren InstructionWrite Disable Wrdi Instruction Block Protection Read Sequence Read Memory AccessWrite Protect WP Pin Write Sequence Write NvSRAM Special Instructions Function Name Opcode Operation NvSRAM Special InstructionsSoftware Store Hold Pin Operation AutoStore Disable AsdisbAutoStore Enable Asenb Operating Range DC Electrical CharacteristicsMaximum Ratings Parameter Description Test Conditions Min Max Unit Thermal Resistance Data Retention and EnduranceCapacitance AC Test Conditions AC Switching Characteristics Cypress Alt Description 40MHz Unit Parameter Min Max Parameters Description CY‘4B101QxA Unit Min Max AutoStore or Power Up RecallSwitching Waveforms Recall Duration 200 Software Controlled Store and Recall CyclesParameter Description CY14B101Q1 Unit Min Max Soft Sequence Processing Time 100 Parameter Description CY14B101Q1 Unit Min To Output Active Time when write latch not setHardware Store Cycle Hardware Store Pulse Width Part Numbering Nomenclature Ordering Code Package Package Type Operating Diagram RangeOrdering Information CY 14 B 101 Q 1-SF X C T Package Diagrams Pin 300 mil DFN Package Pin 300 mil Soic Document History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions REV ECN no