PRELIMINARY
CY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 4 of 22
capacitor (VCAP) and enables the device to safely STORE the
data in the nonvolatile memory when power goes down.
During normal operation, the device draws current from VCC to
charge the capacitor connected to the VCAP pin. When the
voltage on the VCC pin drops below VSWITCH during power down,
the device inhibits all memory accesses to nvSRAM and
automatically performs a conditional STORE operation using the
charge from the VCAP capacitor. The AutoStore operation is not
initiated if no write cycle has been performed since last RECALL.
During power down, the memory accesses are inhibited after the
voltage on VCC pin drops below VSWITCH. To avoid inadvertent
writes, it must be ensured that CS is not left floating prior to this
event. Therefore, during power down the device must be
deselected and CS must be allowed to follow VCC.
Figure3 sh ows the proper connection of the storage capacitor
(VCAP) for AutoStore operation. Refer to DC Electrical Charac-
teristics on page 13 for the size of the VCAP
.
Note CY14B101Q1 does not support AutoStore operation. The
user must perform Software STORE operation by using the SPI
STORE instruction to secure the data.
Software Store Operation
Software STORE enables the user to trigger a STORE operation
through a special SPI instruction. This operation is initiated
irrespective of whether a write has been performed since last nv
operation.
A STORE cycle takes tSTORE to complete, during which all the
memory accesses to nvSRAM are inhibited. The RDY bit of the
Status register or the HSB pin may be polled to find the Ready
or Busy status of the nvSRAM. After the tSTORE cycle time is
completed, the SRAM is activated again for read and write
operations.
Hardware STORE and HSB pin Operation
The HSB pin in CY14B101Q3 is used to control and
acknowledge STORE operations. If no STORE or RECALL is in
progress, this pin can be used to request a Hardware STORE
cycle. When the HSB pin is driven LOW, nvSRAM conditionally
initiates a STORE operation after tDELAY duration. An actual
STORE cycle starts only if a write to the SRAM has been
performed since the last STORE or RECALL cycle. Reads and
Writes to the memory are inhibited for tSTORE duration or as long
as HSB pin is LOW.
The HSB pin also acts as an open drain driver that is internally
driven LOW to indicate a busy condition, when a STORE cycle
(initiated by any means) or Power up RECALL is in progress.
Upon completion of the STORE operation, the nvSRAM remains
disabled until the HSB pin returns HIGH. Leave the HSB pin
unconnected if not used.
Note CY14B101Q1/CY14B101Q2 do not have HSB pin. RDY bit
of the SPI status register may be probed to determine the Ready
or Busy status of nvSRAM
Figure 3. AutoStore Mode
RECALL Operation
A RECALL operation transfers the data stored in the nonvolatile
Quantum Trap elements to the SRAM. A RECALL may be
initiated in two ways: Hardware RECALL, initiated on power up;
and Software RECALL, initiated by a SPI RECALL instruction.
Internally, RECALL is a two-step procedure. First, the SRAM
data is cleared. Next, the nonvolatile information is transferred
into the SRAM cells. All memory accesses are inhibited while a
RECALL cycle is in progress. The RECALL operation does not
alter the data in the nonvolatile elements.
Hardware Recall (Power Up)
During power up, when VCC crosses VSWITCH, an automatic
RECALL sequence is initiated which transfers the content of
nonvolatile memory on to the SRAM. The data would previously
have been stored on the nonvolatile memory through a STORE
sequence.
A Power Up Recall cycle takes tFA time to complete and the
memory access is disabled during this time. HSB pin can be
used to detect the Ready status of the device. user
Software RECALL
Software RECALL enables the user to initiate a RECALL
operation to restore the content of nonvolatile memory on to the
SRAM. A Software RECALL is issued by using the SPI
instruction for RECALL.
A Software RECALL takes tRECALL to complete during which all
memory accesses to nvSRAM are inhibited. The controller must
provide sufficient delay for the RECALL operation to complete
before issuing any memory access instructions.
Disabling and Enabling AutoStore
If the application does not require the AutoStore feature, it can
be disabled by using the ASDISB instruction. If this is done, the
nvSRAM does not perform a STORE operation at power down.
AutoStore can be re-enabled by using the ASENB instruction.
However, these operations are not nonvolatile and if the user
needs this setting to survive power cycle, a STORE operation
must be performed following Autostore Disable or Enable
operation.
0.1uF
Vcc
10kOhm
VCAP
Vcc
CS VCAP
VSS
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