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| PRELIMINARY | CY14B108L, CY14B108N | |
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Document History Page |
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Document Title: CY14B108L/CY14B108N 8 Mbit (1024K x 8/512K x 16) nvSRAM |
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Document Number: |
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Rev. | ECN No. | Orig. of Change | Submission | Description of Change | |||
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| Date |
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** | 2428826 | GVCH | See ECN | New Data Sheet |
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*A | 2520023 | GVCH/PYRS | 06/23/08 | Updated ICC1 for tRC=20ns, 25ns and 45ns access speed for both industrial | |||
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| and Commercial temperature Grade |
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| Updated Thermal resistance values for | |
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| Changed tCW value from 16ns to 15ns | |
*B | 2676670 | GVCH/PYRS | 03/20/2009 | Added maximum accumulated storage time for 150°C and 85°C Temperature | |||
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| Added best practices |
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| Changed ICC2 from 12mA to 20mA |
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| Changed ICC3 from 38mA to 40mA |
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| Changed ICC4 from 12mA to 10mA |
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| Changed ISB from 6mA to 10mA |
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| Changed VCAP from 164uF to 360uF | |
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| Changed Input Rise and Fall Times from 5ns to 3ns | |
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| Updated ICC1, ICC3, ISBand IOZ Test conditions | |
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| Changed tDELAY to 20ns, 25ns, 25ns for 15ns, 20ns, 45ns part respectively | |
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| Changed tSTORE from 15ms to 8ms |
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| Added VHDIS, tHHHD and tLZHSB parameters | |
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| Software controlled STORE/RECALL cycle table: Changed tAS to tSA | |
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| Changed tGHAX to tHA |
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| Added tDHSB parameter |
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| Changed tHLHX to tPHSB |
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| Updated tSS from 70us to 100us |
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| Added Truth table for SRAM operations | |
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| Updated ordering information |
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Document #: | Page 23 of 24 |
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