Cypress CY7C024BV, CY7C024AV Switching Characteristics, ALL Inputpulses, Read Cycle, Write Cycle

Models: CY7C0241AV CY7C0251AV CY7C025AV CY7C024AV CY7C036AV CY7C024BV CY7C026AV

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CY7C024AV/024BV/025AV/026AV

CY7C0241AV/0251AV/036AV

Figure 4. AC Test Loads and Waveforms

OUTPUT

C = 30 pF

3.3V

R1 = 590Ω

OUTPUT

 

 

 

 

 

RTH = 250Ω

R2 = 435Ω

C = 30pF

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C = 5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTH = 1.4V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.3V

R1 = 590Ω

R2 = 435Ω

(a) Normal Load (Load 1)

 

 

(b) Thévenin Equivalent

(Load 1)

 

 

 

 

 

 

ALL INPUTPULSES

 

3.0V

 

 

 

 

 

 

 

 

 

 

 

 

90%

 

GND

10%

 

 

 

 

 

 

90%

 

 

 

 

 

10%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3 ns

 

 

3 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(c)Three-State Delay (Load 2) (Used for tLZ, tHZ, tHZWE, and tLZWE including scope and jig)

Switching Characteristics

Over the Operating Range [20]

 

 

 

 

 

 

CY7C024AV/024BV/025AV/026AV

 

 

Parameter

 

 

 

Description

CY7C0241AV/0251AV/036AV

 

Unit

 

 

 

 

-20

 

-25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

 

Max

Min

 

Max

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

20

 

 

25

 

 

ns

tAA

 

Address to Data Valid

 

 

20

 

 

25

ns

tOHA

 

Output Hold From Address Change

3

 

 

3

 

 

ns

tACE[21]

 

CE

 

LOW to Data Valid

 

 

20

 

 

25

ns

tDOE

 

OE

LOW to Data Valid

 

 

12

 

 

13

ns

tLZOE[22, 23, 24]

 

OE

Low to Low Z

3

 

 

3

 

 

ns

tHZOE[22, 23, 24]

 

OE

HIGH to High Z

 

 

12

 

 

15

ns

tLZCE[22, 23, 24]

 

CE

LOW to Low Z

3

 

 

3

 

 

ns

tHZCE[22, 23, 24]

 

CE

HIGH to High Z

 

 

12

 

 

15

ns

t

[24]

 

CE

LOW to Power Up

0

 

 

0

 

 

ns

 

PU

 

 

 

 

 

 

 

 

 

 

 

t

[24]

 

CE

HIGH to Power Down

 

 

20

 

 

25

ns

 

PD

 

 

 

 

 

 

 

 

 

 

 

tABE[21]

 

Byte Enable Access Time

 

 

20

 

 

25

ns

 

Write Cycle

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

20

 

 

25

 

 

ns

tSCE[21]

 

CE

LOW to Write End

15

 

 

20

 

 

ns

tAW

 

Address Valid to Write End

15

 

 

20

 

 

ns

tHA

 

Address Hold From Write End

0

 

 

0

 

 

ns

t

[21]

 

Address Setup to Write Start

0

 

 

0

 

 

ns

 

SA

 

 

 

 

 

 

 

 

 

 

 

Notes

 

 

 

 

 

 

 

 

 

 

20.Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOI/IOH and 30 pF load capacitance.

21.To access RAM, CE = L, UB = L, SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire tSCE time.

22.At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.

23.Test conditions used are Load 3.

24.This parameter is guaranteed but not tested. For information on port to port delay through RAM cells from writing port to reading port, refer to Figure 12.

Document #: 38-06052 Rev. *J

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Cypress CY7C024BV, CY7C026AV Switching Characteristics, ALL Inputpulses, CY7C024AV/024BV/025AV/026AV Parameter Description