CY7C1302DV25

Maximum Ratings

(Above which the useful life may be impaired.)

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

 

Power Applied

–55°C to + 125°C

Supply Voltage on VDD Relative to GND

–0.5V to + 3.6V

Supply Voltage on VDDQ Relative to GND

–0.5V to + VDD

DC Applied to Outputs in High-Z

–0.5V to VDDQ + 0.5V

DC Input Voltage[13

–0.5V to V + 0.5V

 

 

DD

Current into Outputs (LOW)

20 mA

Electrical Characteristics Over the Operating Range[15] DC Electrical Characteristics Over the Operating Range

Static Discharge Voltage

 

 

 

>2001V

(per MIL-STD-883, Method 3015)

 

 

 

Latch-up Current

 

 

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

 

 

Range

Ambient

V

[14]

V

[14]

Temperature (T )

 

A

 

DD

 

DDQ

Com’l

0°C to +70°C

2.5

± 0.1V

1.4V to 1.9V

 

 

 

 

 

 

Ind’l

–40°C to +85°C

 

 

 

 

 

 

 

 

 

 

Parameter

Description

Test Conditions

Min.

Typ.

Max.

Unit

VDD

Power Supply Voltage

 

2.4

2.5

2.6

V

VDDQ

I/O Supply Voltage

 

1.4

1.5

1.9

V

VOH

Output HIGH Voltage

Note 16

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOL

Output LOW Voltage

Note 17

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOH(LOW)

Output HIGH Voltage

IOH = –0.1 mA, Nominal Impedance

VDDQ – 0.2

 

VDDQ

V

VOL(LOW)

Output LOW Voltage

IOL = 0.1 mA, Nominal Impedance

VSS

 

0.2

V

VIH

Input HIGH Voltage[13]

 

VREF + 0.1

 

VDDQ + 0.3

V

VIL

Input LOW Voltage[13, 18]

 

–0.3

 

VREF – 0.1

V

IX

Input Load Current

GND VI VDDQ

–5

 

5

A

IOZ

Output Leakage Current

GND VI VDDQ, Output Disabled

–5

 

5

A

VREF

Input Reference Voltage[19]

Typical value = 0.75V

0.68

0.75

0.95

V

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

 

 

500

mA

 

 

f = fMAX = 1/tCYC

 

 

 

 

ISB1

Automatic

Max. VDD, Both Ports Deselected,

 

 

240

mA

 

Power-Down

VIN VIH or VIN VIL, f =fMAX

 

 

 

 

 

Current

=1/tCYC, Inputs Static

 

 

 

 

AC Input

Requirements Over the Operating

Range

 

 

 

 

Parameter

Description

Test Conditions

Min.

Typ.

Max.

Unit

VIH

Input HIGH Voltage

 

VREF + 0.2

 

V

VIL

Input LOW Voltage

 

 

VREF – 0.2

V

Notes:

13.Overshoot: VIH(AC) < VDDQ +0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > –1.5V (Pulse width less than tCYC/2).

14.Power-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH< VDD and VDDQ< VDD.

15.All voltage referenced to Ground.

16.Output are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175<= RQ <= 350.

17.Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175<= RQ <= 350.

18.This spec is for all inputs except C and C Clock. For C and C Clock, VIL(Max.) = VREF – 0.2V.

19.VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller.

Document #: 38-05625 Rev. *A

Page 13 of 18

[+] Feedback

Page 13
Image 13
Cypress CY7C1302DV25 manual Maximum Ratings, Operating Range, Range Ambient Temperature T, AC Input

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.