CY7C1302DV25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions (continued)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

 

I/O

 

 

 

 

 

Description

 

 

 

 

 

 

 

 

 

C

 

Input-

 

Positive Input Clock for Output Data. C is used in conjunction with

 

to clock out the Read data

C

 

 

 

 

 

Clock

 

from the device. C and C can be used together to deskew the flight times of various devices on

 

 

 

 

 

 

 

 

the board back to the controller. See application example for further details.

 

 

 

 

 

Input-Clock

 

Negative Input Clock for Output Data.

 

is used in conjunction with C to clock out the Read data

 

C

C

 

 

 

 

 

 

 

 

from the device. C and C can be used together to deskew the flight times of various devices on

 

 

 

 

 

 

 

 

the board cack to the controller. See application example for further details.

 

K

 

Input-Clock

 

Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the

 

 

 

 

 

 

 

 

device and to drive out data through Q[17:0] when in single clock mode. All accesses are initiated

 

 

 

 

 

 

 

 

on the rising edge of K.

 

 

 

 

Input-Clock

 

Negative Input Clock Input.

 

is used to capture synchronous inputs being presented to the

 

K

K

 

 

 

 

 

 

 

 

device and to drive out data through Q[17:0] when in single clock mode.

 

ZQ

 

Input

 

Output Impedance Matching Input. This input is used to tune the device outputs to the system

 

 

 

 

 

 

 

 

data bus impedance. Q[17:0] output impedance is set to 0.2 x RQ, where RQ is a resistor connected

 

 

 

 

 

 

 

 

between ZQ and ground. Alternately, this pin can be connected directly to VDDQ, which enables

 

 

 

 

 

 

 

 

the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.

 

TDO

 

Output

 

TDO for JTAG.

 

 

 

 

 

 

 

TCK

 

Input

 

TCK pin for JTAG.

 

 

 

 

 

 

 

TDI

 

Input

 

TDI pin for JTAG.

 

 

 

 

 

 

 

TMS

 

Input

 

TMS pin for JTAG.

 

 

 

 

 

 

 

NC/18M

 

N/A

 

Address expansion for 18M. This is not connected to the die and so can be tied to any voltage

 

 

 

 

 

 

 

 

level.

 

NC/36M

 

N/A

 

Address expansion for 36M. This is not connected to the die and so can be tied to any voltage

 

 

 

 

 

 

 

 

level.

GND/72M

 

Input

 

Address expansion for 72M. This must be tied LOW.

 

 

 

 

 

GND/144M

 

Input

 

Address expansion for 144M. This must be tied LOW.

 

 

 

 

 

NC

 

N/A

 

Not connected to the die. Can be tied to any voltage level.

 

 

 

 

 

VREF

 

Input-

 

Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs

 

 

 

 

 

Reference

 

as well as AC measurement points.

 

VDD

 

Power Supply

 

Power supply inputs to the core of the device.

 

VSS

 

Ground

 

Ground for the device.

 

VDDQ

 

Power Supply

 

Power supply inputs for the outputs of the device.

Introduction

Functional Overview

The CY7C1302DV25 is a synchronous pipelined Burst SRAM equipped with both a Read port and a Write port. The Read port is dedicated to Read operations and the Write port is dedicated to Write operations. Data flows into the SRAM through the Write port and out through the Read port. These devices multiplex the address inputs in order to minimize the number of address pins required. By having separate Read and Write ports, the QDR-I completely eliminates the need to “turn-around” the data bus and avoids any possible data contention, thereby simplifying system design. 38-05625

Accesses for both ports are initiated on the rising edge of the Positive Input Clock (K). All synchronous input timing is refer- enced from the rising edge of the input clocks (K and K) and all output timing is referenced to the output clocks (C and C, or K and K when in single clock mode).

All synchronous data inputs (D[17:0]) pass through input registers controlled by the input clocks (K and K). All

synchronous data outputs (Q[17:0]) pass through output registers controlled by the rising edge of the output clocks (C and C, or K and K when in single clock mode).

All synchronous control (RPS, WPS, BWS[1:0]) inputs pass through input registers controlled by the rising edge of input clocks (K and K).

Read Operations

The CY7C1302DV25 is organized internally as 2 arrays of 256K x 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address is latched on the rising edge of the K clock. Following the next K clock rise the corresponding lower order 18-bit word of data is driven onto the Q[17:0] using C as the output timing reference. On the subsequent rising edge of C the higher order data word is driven onto the Q[17:0]. The requested data will be valid 2.5 ns from the rising edge of the output clock (C and C, or K and K when in single clock mode, 167-MHz device).

Document #: 38-05625 Rev. *A

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Cypress CY7C1302DV25 manual Introduction

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.