CY7C1302DV25

9-Mbit Burst of Two Pipelined SRAMs with QDR™ Architecture

Features

Separate independent Read and Write data ports

Supports concurrent transactions

167-MHz clock for high bandwidth

2.5 ns Clock-to-Valid access time

2-word burst on all accesses

Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 333 MHz) @ 167 MHz

Two input clocks (K and K) for precise DDR timing

SRAM uses rising edges only

Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches.

Single multiplexed address input bus latches address inputs for both Read and Write ports

Separate Port Selects for depth expansion

Synchronous internally self-timed writes

2.5V core power supply with HSTL Inputs and Outputs

Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

Variable drive HSTL output buffers

Expanded HSTL output voltage (1.4V–1.9V)

JTAG Interface

Configurations

CY7C1302DV25 – 512K x 18

Functional Description

The CY7C1302DV25 is a 2.5V Synchronous Pipelined SRAM equipped with QDR™ architecture. QDR architecture consists of two separate ports to access the memory array. The Read port has dedicated data outputs to support Read operations and the Write Port has dedicated data inputs to support Write operations. Access to each port is accomplished through a common address bus. The Read address is latched on the rising edge of the K clock and the Write address is latched on the rising edge of K clock. QDR has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common I/O devices. Accesses to the CY7C1302DV25 Read and Write ports are completely independent of one another. All accesses are initiated synchronously on the rising edge of the positive input clock

(K). In order to maximize data throughput, both Read and Write ports are equipped with DDR interfaces. Therefore, data can be transferred into the device on every rising edge of both input clocks (K and K) and out of the device on every rising edge of the output clock (C and C, or K and K in a single clock domain) thereby maximizing performance while simplifying system design. Each address location is associated with two 18-bit words that burst sequentially into or out of the device.

Depth expansion is accomplished with a Port Select input for each port. Each Port Select allows each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Logic Block Diagram (CY7C1302DV25)

 

 

 

 

 

 

 

D[17:0]

18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write

Write

 

 

 

 

 

Address

 

Data Reg

Data Reg

 

 

 

 

A(17:0)

 

 

 

 

 

 

 

Register

Decode

 

 

Decode

Address

 

A(17:0)

18

 

256Kx18

256Kx18

 

 

Register

18

 

 

 

 

 

 

 

 

 

Add.

Memory

Memory

Add.

 

 

 

K

CLK

Array

Array

 

 

 

 

Write

 

 

Read

Control

RPS

 

K

Gen.

 

 

 

 

 

 

 

Logic

C

 

 

 

 

Read Data Reg.

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

Vref

 

 

 

 

36

18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18

 

 

 

 

 

 

 

 

 

Control

 

 

 

 

 

Reg.

 

 

 

Reg.

18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WPS

 

 

 

 

18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BWS0

 

 

Logic

 

 

 

Reg.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q[17:0]

BWS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cypress Semiconductor Corporation

198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05625 Rev. *A

 

Revised March 23, 2006

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Cypress manual Features, Configurations, Functional Description, Logic Block Diagram CY7C1302DV25

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.