CY7C1302DV25

Document History Page

Document Title:CY7C1302DV25 9-Mb Burst of 2 Pipelined SRAM with QDR™ Architecture Document Number: 38-05625

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

**

253010

See ECN

SYT

New Data Sheet

 

 

 

 

 

*A

436864

See ECN

NXR

Converted from Preliminary to Final

 

 

 

 

Removed 133 MHz & 100 MHz from product offering

 

 

 

 

Included the Industrial Operating Range.

 

 

 

 

Changed C/C Description in the Features Section & Pin Description Table

 

 

 

 

Changed tTCYC from 100 ns to 50 ns, changed tTF from 10 MHz to 20 MHz and

 

 

 

 

changed tTH and tTL from 40 ns to 20 ns in TAP AC Switching Characteristics

 

 

 

 

table

 

 

 

 

Modified the ZQ pin definition as follows:

 

 

 

 

Alternately, this pin can be connected directly to VDDQ, which enables the

 

 

 

 

minimum impedance mode

 

 

 

 

Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND

 

 

 

 

Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD

 

 

 

 

Modified the Description of IX from Input Load current to Input Leakage

 

 

 

 

Current on page # 13

 

 

 

 

Modified test condition in note# 14 from VDDQ < VDD to VDDQ VDD

 

 

 

 

Updated the Ordering Information table and replaced the Package Name

 

 

 

 

Column with Package Diagram

Document #: 38-05625 Rev. *A

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Cypress CY7C1302DV25 manual Document History, Issue Date Orig. Description of Change

CY7C1302DV25 specifications

The Cypress CY7C1302DV25 is a high-performance static random-access memory (SRAM) device designed to meet the demanding requirements of modern electronic systems. It operates with a supply voltage of 2.5V, making it ideal for battery-powered applications, while offering up to 1 Mbit of memory storage. This device is widely used in various applications, including telecommunications, networking, and industrial automation, due to its speed, reliability, and efficiency.

One of the main features of the CY7C1302DV25 is its fast access time, which reaches as low as 10 nanoseconds. This rapid access allows for quicker data retrieval and processing, enhancing overall system performance. The device supports asynchronous read and write operations, providing flexibility in how data is managed and utilized within a system.

The CY7C1302DV25 has a rich set of functionalities that include word and byte write modes, allowing for efficient data manipulation. Its dual-port architecture enables simultaneous read and write operations, making it suitable for applications requiring high data throughput. This feature is particularly beneficial in systems where multiple devices need to access or update memory concurrently.

From a technological standpoint, the CY7C1302DV25 utilizes advanced CMOS technology, which not only contributes to its low power consumption but also enhances its durability and reliability. Lower power consumption is a crucial aspect for many applications, especially in portable devices, where battery life is a significant concern. The CY7C1302DV25 also incorporates built-in write protection, ensuring data integrity and security against unintentional writes during operation.

In terms of physical characteristics, the device comes in a compact 44-pin Thin Quad Flat No-lead (TQFN) package, making it suitable for space-constrained designs. Its small footprint allows for integration into densely packed circuit boards, providing manufacturers with flexibility in design.

Overall, the Cypress CY7C1302DV25 is a versatile and efficient SRAM solution that combines speed, low power consumption, and robust features, making it an excellent choice for a wide range of applications in the ever-evolving landscape of electronics. Its reliability and advanced specifications position it as a dependable memory solution for both current and future technologies.