CY7C1339G

4-Mbit (128K x 32) Pipelined Sync SRAM

Features

Registered inputs and outputs for pipelined operation

128K × 32 common I/O architecture

3.3V core power supply (VDD)

2.5V/3.3V I/O power supply (VDDQ)

Fast clock-to-output times

— 2.6 ns (for 250-MHz device)

Provide high-performance 3-1-1-1 access rate

User-selectable burst counter supporting IntelPentiuminterleaved or linear burst sequences

Separate processor and controller address strobes

Synchronous self-timed writes

Asynchronous output enable

Available in lead-free 100-Pin TQFP package, lead-free and non-lead-free 119-Ball BGA package

“ZZ” Sleep Mode Option

Functional Description[1]

The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to four bytes wide as controlled by the byte write control inputs. GW when active LOW causes all bytes to be written.

The CY7C1339G operates from a +3.3V core power supply while all outputs may operate with either a +2.5 or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.

Logic Block Diagram

A 0, A 1, A

M O DE

A DV

CLK

A DSC

A DSP

BW D

BW C

BW B

B W A

B W E

G W

CE 1

CE 2

CE 3

O E

ZZ

A DDR E SS

 

 

 

 

 

 

 

 

R E G ISTE R

 

2

A [1: 0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q 1

 

 

 

 

 

 

 

B U R ST

 

 

 

 

 

 

CO U N TE R

 

 

 

 

 

 

CLR

A N D

Q 0

 

 

 

 

 

 

 

LO G IC

 

 

 

 

 

DQ D

 

 

DQ D

 

 

 

 

 

BY TE

 

 

BY TE

 

 

 

 

 

W RITE REGISTER

 

 

W RITE DRIV ER

 

 

 

 

 

DQ C

 

 

DQ C

 

 

 

 

 

BY TE

 

 

BY TE

 

 

 

O U TPU T

 

W RITE REGISTER

 

 

W RITE DRIV ER

M E M O R Y

 

O U TPU T

D Q s

 

 

SE N SE

B U FFE R S

 

 

 

 

A R R A Y

R EG ISTER S

 

 

 

DQ B

A M PS

 

 

 

 

 

 

 

E

 

DQ B

 

 

 

 

 

 

BY TE

 

 

BY TE

 

 

 

 

 

 

 

W RITE DRIV ER

 

 

 

 

 

W RITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQ A

 

 

DQ A

 

 

 

 

 

 

 

BY TE

 

 

 

 

 

BY TE

 

 

 

 

 

 

 

 

 

W RITE DRIV ER

 

 

 

 

 

W RITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INPU T

E N A B LE

PIPELINED

 

 

 

 

 

R EG ISTER S

 

 

 

 

 

 

R E G ISTE R

 

 

 

 

 

 

ENA BLE

 

 

 

 

 

 

 

 

 

 

 

 

 

SLE E P

 

 

 

 

 

 

 

 

CO N TR O L

 

 

 

 

 

 

 

 

Note:

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation

198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05520 Rev. *F

 

Revised July 5, 2006

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Cypress CY7C1339G manual Features, Functional Description1, Logic Block Diagram, Cypress Semiconductor Corporation