CY7C1339GDocument #: 38-05520 Rev. *F Page 9 of 18
ISB3 Automatic CE
Power-down
Current—CMOS Inputs
VDD = Max, Device Deselected, or
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz 105 mA
5-ns cycle, 200 MHz 95 mA
6-ns cycle, 166 MHz 85 mA
7.5-ns cycle, 133 MHz 75 mA
ISB4 Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0 All Speeds 45 mA
Capacitance[11]
Parameter Description Test Conditions TQFP
Package BGA
Package Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VDD = 3.3V.
VDDQ = 3.3V
55pF
CCLK Clock Input Capacitance 5 5 pF
CI/O Input/Output Capacitance 5 7 pF
Thermal Resistance[11]
Parameter Description Test Conditions TQFP
Package BGA
Package Unit
ΘJA Thermal Resistance
(Junction to Ambient) Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA/JESD51
30.32 34.1 °C/W
ΘJC Thermal Resistance
(Junction to Case) 6.85 14.0 °C/W
AC Test Loads and Waveforms
Note:
11.Tested initially and after any design or process change that may affect these parameters.
Electrical Characteristics Over the Operating Range[9, 10] (continued)
Parameter Description Test Conditions Min. Max. Unit
OUTPUT
R = 317Ω
R = 351Ω
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT
RL= 50Ω
Z0= 50Ω
V
T
= 1.5V
3.3V ALL INPUT PULSES
VDDQ
GND
90%
10% 90%
10%
≤1 ns ≤1 ns
(c)
OUTPUT
R = 1667Ω
R = 1538Ω
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT
RL= 50Ω
Z0= 50Ω
VT= 1.25V
2.5V ALL INPUT PULSES
VDDQ
GND
90%
10% 90%
10%
≤1 ns ≤1 ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
OUTPUT
R = 1667Ω
R = 1538Ω
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT
RL= 50Ω
Z0= 50Ω
VT= 1.25V
2.5V ALL INPUT PULSES
VDDQ
GND
90%
10% 90%
10%
≤1 ns ≤1 ns
(c)
2.5V I/O Test Load
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