CY7C1511JV18, CY7C1526JV18

 

 

 

 

 

 

CY7C1511JV18, CY7C1526JV18

 

 

 

 

 

 

CY7C1513JV18, CY7C1515JV18

Application Example

 

 

 

 

 

 

 

 

 

Figure 1 shows four QDR-II used in an application.

 

 

 

 

 

 

 

 

 

 

Figure 1. Application Example

 

 

 

 

 

 

 

SRAM #1

ZQ

R = 250ohms

SRAM #4

ZQ

R = 250ohms

 

Vt

 

R W B

 

CQ/CQ#

 

R W B

 

CQ/CQ#

 

 

 

D

P P W

 

Q

D

P P W

 

Q

 

 

R

S S S

 

S S S

 

 

 

A

C C# K K#

 

 

 

 

 

# # #

A

# # #

C C# K K#

 

 

DATA IN

 

 

 

 

 

 

 

 

 

 

DATA OUT

 

 

 

 

 

Vt

 

 

 

 

Address

 

 

 

 

 

Vt

 

 

 

BUS

RPS#

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

 

WPS#

 

 

 

 

 

 

 

 

 

MASTER

 

 

 

 

 

 

 

 

 

BWS#

 

 

 

 

 

 

 

 

 

(CPU

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN#

 

 

 

 

 

 

 

 

 

or

Source K

 

 

 

 

 

 

 

 

 

ASIC)

 

 

 

 

 

 

 

 

 

Source K#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delayed K

 

 

 

 

 

 

 

 

 

 

Delayed K#

 

 

 

 

 

 

 

 

 

 

R

R = 50ohms

Vt = Vddq/2

 

 

 

 

 

 

Truth Table

 

 

 

 

 

 

 

 

 

The truth table for CY7C1511JV18, CY7C1526JV18, CY7C1513JV18, and CY7C1515JV18 follows. [2, 3, 4, 5, 6, 7]

 

Operation

K

RPS

 

 

WPS

DQ

DQ

DQ

DQ

Write Cycle:

L-H

H [8]

 

 

L [9]

D(A) at K(t + 1)

D(A + 1) at

 

 

D(A + 2) at K(t + 2)

 

 

 

 

 

K(t + 1)

D(A + 3) at K(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; input write data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

on two consecutive K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L [9]

 

 

X

Q(A) at

 

 

Q(A + 1) at C(t + 2)

 

 

 

Q(A + 3) at C(t + 3)

 

 

C(t + 1)

Q(A + 2) at C(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; wait one and a

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

half cycle; read data on

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

two consecutive C and C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

 

 

H

D = X

D = X

D = X

D = X

 

 

 

 

 

 

Q = High-Z

Q = High-Z

Q = High-Z

Q = High-Z

Standby: Clock Stopped

Stopped

X

 

 

X

Previous State

Previous State

Previous State

Previous State

Notes

2.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected with the outputs in a tri-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.

5.“t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

9.This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read or write request.

Document Number: 001-12560 Rev. *C

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Cypress manual CY7C1511JV18, CY7C1526JV18, Application Example, Truth Table, CY7C1513JV18, CY7C1515JV18, Asic