Cypress CY7C1511V18 manual Features, Functional Description, Configurations, Selection Guide

CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

72-Mbit QDR™-II SRAM 4-Word Burst Architecture

Features

■Separate independent read and write data ports

❐Supports concurrent transactions

■300 MHz clock for high bandwidth

■4-word burst for reducing address bus frequency

■Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz

■Two input clocks (K and K) for precise DDR timing

❐SRAM uses rising edges only

■Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches

■Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■Single multiplexed address input bus latches address inputs for read and write ports

■Separate port selects for depth expansion

■Synchronous internally self-timed writes

■Available in x8, x9, x18, and x36 configurations

■Full data coherency, providing most current data

■Core VDD = 1.8 (± 0.1V); IO VDDQ = 1.4V to VDD

■Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■Offered in both Pb-free and non Pb-free packages

■Variable drive HSTL output buffers

■JTAG 1149.1 compatible test access port

■Delay Lock Loop (DLL) for accurate data placement

Functional Description

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II archi- tecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common IO devices. Each port can be accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1511V18), 9-bit words (CY7C1526V18), 18-bit words (CY7C1513V18), or 36-bit words (CY7C1515V18) that burst sequentially into or out of the device. Because data can be trans- ferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”.

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Configurations

CY7C1511V18 – 8M x 8

CY7C1526V18 – 8M x 9

CY7C1513V18 – 4M x 18

CY7C1515V18 – 2M x 36

Selection Guide

Description		300 MHz	278 MHz	250 MHz	200 MHz	167 MHz	Unit
Maximum Operating Frequency		300	278	250	200	167	MHz
Maximum Operating Current	x8	930	865	790	655	570	mA
	x9	940	870	795	660	575
	x18	1020	950	865	715	615
	x36	1230	1140	1040	850	725

Cypress Semiconductor Corporation • 198 Champion Court	•	San Jose, CA 95134-1709	•	408-943-2600
Document Number: 38-05363 Rev. *F		Revised August 06, 2008

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