Cypress CY7C1516KV18, CY7C1520KV18 manual Features, Functional Description, Configurations

CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18

72-Mbit DDR-II SRAM 2-Word Burst Architecture

Features

■72-Mbit Density (8M x 8, 8M x 9, 4M x 18, 2M x 36)

■333 MHz Clock for High Bandwidth

■2-word Burst for reducing Address Bus Frequency

■Double Data Rate (DDR) Interfaces (data transferred at 666 MHz) at 333 MHz

■Two Input Clocks (K and K) for precise DDR Timing

❐SRAM uses rising edges only

■Two Input Clocks for Output Data (C and C) to minimize Clock Skew and Flight Time mismatches

■Echo Clocks (CQ and CQ) simplify Data Capture in High Speed Systems

■Synchronous Internally Self-timed Writes

■DDR-II operates with 1.5 Cycle Read Latency when DOFF is asserted HIGH

■Operates similar to DDR-I Device with 1 Cycle Read Latency when DOFF is asserted LOW

■1.8V Core Power Supply with HSTL Inputs and Outputs

■Variable Drive HSTL Output Buffers

■Expanded HSTL Output Voltage (1.4V–VDD)

❐Supports both 1.5V and 1.8V IO supply

■Available in 165-Ball FBGA Package (13 x 15 x 1.4 mm)

■Offered in both Pb-free and non Pb-free Packages

■JTAG 1149.1 compatible Test Access Port

■Phase Locked Loop (PLL) for Accurate Data Placement

Functional Description

The CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1516KV18 and two 9-bit words in the case of CY7C1527KV18 that burst sequentially into or out of the device. The burst counter always starts with a “0” internally in the case of CY7C1516KV18 and CY7C1527KV18. On CY7C1518KV18 and CY7C1520KV18, the burst counter takes in the least significant bit of the external address and bursts two 18-bit words in the case of CY7C1518KV18 and two 36-bit words in the case of CY7C1520KV18 sequentially into or out of the device.

Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs (Q, sharing the same physical pins as the data inputs D) are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately capturing data from each individual DDR SRAM in the system design. Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Configurations

CY7C1516KV18 – 8M x 8

CY7C1527KV18 – 8M x 9

CY7C1518KV18 – 4M x 18

CY7C1520KV18 – 2M x 36

Table 1. Selection Guide

Description		333 MHz	300 MHz	250 MHz	200 MHz	167 MHz	Unit
Maximum Operating Frequency		333	300	250	200	167	MHz
Maximum Operating Current	x8	510	480	420	370	340	mA
	x9	510	480	420	370	340
	x18	520	490	430	380	340
	x36	640	600	530	450	400

Cypress Semiconductor Corporation • 198 Champion Court	•	San Jose, CA 95134-1709	•	408-943-2600
Document Number: 001-00437 Rev. *E		Revised March 30, 2009

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