CY7C1516KV18, CY7C1527KV18

CY7C1518KV18, CY7C1520KV18

Truth Table

The truth table for the CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow. [2, 3, 4, 5, 6, 7]

Operation

K

LD

R/W

DQ

DQ

Write Cycle:

L-H

L

L

D(A1) at K(t + 1)

D(A2) at

 

 

K(t + 1)

Load address; wait one cycle;

 

 

 

 

 

 

 

 

 

input write data on consecutive K and

K

rising edges.

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L

H

Q(A1) at

 

 

Q(A2) at C(t + 2)

C(t + 1)

Load address; wait one and a half cycle;

 

 

 

 

 

 

 

 

 

read data on consecutive C and C rising edges.

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

X

High-Z

High-Z

 

 

 

 

 

 

Standby: Clock Stopped

Stopped

X

X

Previous State

Previous State

 

 

 

 

 

 

 

 

 

 

 

 

Burst Address Table

(CY7C1518KV18, CY7C1520KV18)

First Address (External)

Second Address (Internal)

X..X0

X..X1

 

 

X..X1

X..X0

 

 

Write Cycle Descriptions

The write cycle description table for CY7C1516KV18 and CY7C1518KV18 follows. [2, 8]

 

BWS0/

BWS1/

K

 

 

 

Comments

 

 

 

 

K

 

 

 

 

 

 

 

 

 

 

 

 

NWS0

 

NWS1

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 both nibbles (D[7:0]) are written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

L

L-H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 both nibbles (D[7:0]) are written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

H

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

L

 

H

L–H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

H

 

L

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

remains unaltered.

 

H

 

L

L–H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

remains unaltered.

 

H

 

H

L–H

 

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

H

 

H

L–H

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected with the outputs in a tristate condition.

4.On CY7C1518KV18 and CY7C1520KV18, “A1” represents address location latched by the devices when transaction was initiated and “A2” represents the addresses sequence in the burst. On CY7C1516KV18 and CY7C1527KV18, “A1” represents A + ‘0’ and “A2” represents A + ‘1’.

5.“t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.Ensure that when the clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved.

Document Number: 001-00437 Rev. *E

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Cypress CY7C1527KV18 manual Write Cycle Descriptions, Operation, First Address External Second Address Internal, Comments

CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

One of the standout features of these devices is their high-speed access times, which typically range from 12 ns to 15 ns, allowing for rapid data retrieval and writing. This speed makes them ideal for applications where low latency is crucial, such as in cache memory systems and high-speed computing. The low power consumption of these devices also makes them attractive for battery-operated equipment, as they can operate effectively while minimizing energy usage.

The CY7C1516KV18 and other models in this series incorporate advanced CMOS technology, which is instrumental in achieving low standby and active power requirements. This technology not only enhances the overall efficiency of the memory devices but also contributes to reduced thermal generation, which is an essential factor in maintaining performance and longevity in high-density applications.

Data integrity is another critical characteristic of these SRAM devices. They are designed with features such as byte-write capability and asynchronous read/write operations, ensuring that users can manage data efficiently and reliably. The robust architecture also allows for simple interfacing with most processors and microcontrollers, facilitating easy integration into various systems.

The packages of these SRAM chips are available in several form factors, including 44-pin and 48-pin configurations, allowing for flexibility in board design and layout. Their compatibility with standard interface protocols ensures seamless communication with other components of electronic designs.

These Cypress SRAM devices support a range of temperature specifications, making them suitable for both commercial and industrial-grade applications. Enhanced reliability during various operating conditions assures designers that these memory chips will maintain performance in diverse environments.

In summary, the Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 SRAM devices offer high speed, low power consumption, and flexibility in integration. With their advanced technology and robust features, these memory solutions continue to play a vital role in modern electronics, driving innovation across multiple sectors.