CY7C1516KV18, CY7C1527KV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18, CY7C1520KV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Name

I/O

 

 

 

 

Pin Description

 

 

DQ[x:0]

Input Output-

Data Input Output Signals. Inputs are sampled on the rising edge of K and

 

clocks during valid write

 

K

 

 

 

 

 

 

 

 

Synchronous

operations. These pins drive out the requested data when the read operation is active. Valid data is driven

 

 

 

 

 

 

 

 

 

out on the rising edge of both the C and C clocks during read operations or K and K when in single clock

 

 

 

 

 

 

 

 

 

mode. When read access is deselected, Q[x:0] are automatically tristated.

 

 

 

 

 

 

 

 

 

CY7C1516KV18 − DQ[7:0]

 

 

 

 

 

 

 

 

 

CY7C1527KV18 − DQ[8:0]

 

 

 

 

 

 

 

 

 

CY7C1518KV18 − DQ[17:0]

 

 

 

 

 

 

 

 

 

CY7C1520KV18 − DQ[35:0]

 

 

 

 

 

 

 

 

Input-

Synchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition

 

 

LD

 

 

 

 

 

 

 

 

Synchronous

includes address and read/write direction. All transactions operate on a burst of 2 data.

 

 

 

 

 

 

 

,

Input-

Nibble Write Select 0, 1 − Active LOW (CY7C1516KV18 Only). Sampled on the rising edge of the K

 

 

NWS

 

 

NWS10

Synchronous

and K clocks during write operations. Used to select which nibble is written into the device during the

 

 

 

 

 

 

 

 

 

current portion of the write operations. Nibbles not written remain unaltered.

 

 

 

 

 

 

 

 

 

NWS0 controls D[3:0] and NWS1 controls D[7:4].

 

 

 

 

 

 

 

 

 

All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select

 

 

 

 

 

 

 

 

 

ignores the corresponding nibble of data and it is not written into the device.

 

 

 

 

 

 

0,

Input-

Byte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and

 

 

clocks during

 

 

BWS

K

 

 

BWS1,

Synchronous

write operations. Used to select which byte is written into the device during the current portion of the write

 

 

BWS2,

 

operations. Bytes not written remain unaltered.

 

 

BWS3

 

CY7C1527KV18 − BWS0

controls D[8:0]

 

 

 

 

 

 

 

 

 

CY7C1518KV18 − BWS0

controls D[8:0] and

BWS

1 controls D

[17:9].

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1520KV18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls

 

 

 

 

 

 

 

 

 

D[35:27].

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select

 

 

 

 

 

 

 

 

 

ignores the corresponding byte of data and it is not written into the device.

 

 

A, A0

Input-

Address Inputs. These address inputs are multiplexed for both read and write operations. Internally, the

 

 

 

 

 

 

 

 

Synchronous

device is organized as 8M x 8 (2 arrays each of 4M x 8) for CY7C1516KV18 and 8M x 9 (2 arrays each

 

 

 

 

 

 

 

 

 

of 4M x9) for CY7C1527KV18, 4M x 18 (2 arrays each of 2M x 18) for CY7C1518KV18, and 2M x 36 (2

 

 

 

 

 

 

 

 

 

arrays each of 1M x 36) for CY7C1520KV18.

 

 

 

 

 

 

 

 

 

CY7C1516KV18 – Since the least significant bit of the address internally is a “0,” only 22 external address

 

 

 

 

 

 

 

 

 

inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1527KV18 – Since the least significant bit of the address internally is a “0,” only 22 external address

 

 

 

 

 

 

 

 

 

inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1518KV18 – A0 is the input to the burst counter. These are incremented in a linear fashion internally.

 

 

 

 

 

 

 

 

 

22 address inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1520KV18 – A0 is the input to the burst counter. These are incremented in a linear fashion internally.

 

 

 

 

 

 

 

 

 

21 address inputs are needed to access the entire memory array. All the address inputs are ignored when

 

 

 

 

 

 

 

 

 

the appropriate port is deselected.

 

 

 

 

 

 

Input-

Synchronous Read or Write Input. When

 

 

is LOW, this input designates the access type (read when

 

 

R/W

LD

 

 

 

 

 

 

 

 

Synchronous

R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold times

 

 

 

 

 

 

 

 

 

around edge of K.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CInput Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details.

CInput Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details.

K

Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device

 

and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising

 

edge of K.

KInput Clock Negative Input Clock Input. K is used to capture synchronous data being presented to the device and to drive out data through Q[x:0] when in single clock mode.

Document Number: 001-00437 Rev. *E

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Cypress CY7C1527KV18, CY7C1520KV18 manual Pin Definitions, Pin Name Pin Description, Synchronous Read or Write Input. When
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CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

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Data integrity is another critical characteristic of these SRAM devices. They are designed with features such as byte-write capability and asynchronous read/write operations, ensuring that users can manage data efficiently and reliably. The robust architecture also allows for simple interfacing with most processors and microcontrollers, facilitating easy integration into various systems.

The packages of these SRAM chips are available in several form factors, including 44-pin and 48-pin configurations, allowing for flexibility in board design and layout. Their compatibility with standard interface protocols ensures seamless communication with other components of electronic designs.

These Cypress SRAM devices support a range of temperature specifications, making them suitable for both commercial and industrial-grade applications. Enhanced reliability during various operating conditions assures designers that these memory chips will maintain performance in diverse environments.

In summary, the Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 SRAM devices offer high speed, low power consumption, and flexibility in integration. With their advanced technology and robust features, these memory solutions continue to play a vital role in modern electronics, driving innovation across multiple sectors.
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