CY7C1516KV18, CY7C1527KV18

CY7C1518KV18, CY7C1520KV18

Switching Characteristics (continued)

Over the Operating Range [20, 21]

Cypress

Consortium

 

 

 

 

 

Description

333 MHz

300 MHz

250 MHz

200 MHz

167 MHz

Unit

Parameter

Parameter

 

 

 

 

 

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

tCHQV

C/C

Clock Rise (or K/K in single

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

 

 

 

 

clock mode) to Data Valid

 

 

 

 

 

 

 

 

 

 

 

tDOH

tCHQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Data Output Hold after Output C/C

 

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

 

 

 

 

Clock Rise (Active to Active)

 

 

 

 

 

 

 

 

 

 

 

tCCQO

tCHCQV

 

 

Clock Rise to Echo Clock Valid

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

C/C

tCQOH

tCHCQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Echo Clock Hold after C/C

Clock

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

 

 

 

 

Rise

 

 

 

 

 

 

 

 

 

 

 

tCQD

tCQHQV

Echo Clock High to Data Valid

–

0.25

–

0.27

–

0.30

–

0.35

–

0.40

ns

tCQDOH

tCQHQX

Echo Clock High to Data Invalid

–0.25

–

–0.27

–

–0.30

–

–0.35

–

–0.40

–

ns

tCQH

tCQHCQL

 

 

 

 

 

 

 

 

 

HIGH [23]

1.25

–

1.40

–

1.75

–

2.25

–

2.75

–

ns

Output Clock (CQ/CQ)

tCQHCQH

 

tCQHCQH

 

CQ Clock Rise to

 

 

Clock Rise

1.25

–

1.40

–

1.75

–

2.25

–

2.75

–

ns

 

 

CQ

 

 

 

 

(rising edge to rising edge) [23]

 

 

 

 

 

 

 

 

 

 

 

tCHZ

tCHQZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock (C/C)

Rise to High-Z

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

 

 

 

 

(Active to High-Z) [24, 25]

 

 

 

 

 

 

 

 

 

 

 

tCLZ

tCHQX1

 

 

 

 

 

Rise to Low-Z [24, 25]

 

 

 

 

 

 

 

 

 

 

 

Clock (C/C)

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

PLL Timing

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKC Var

tKC Var

Clock Phase Jitter

–

0.20

–

0.20

–

0.20

–

0.20

–

0.20

ns

tKC lock

tKC lock

PLL Lock Time (K, C)

20

–

20

–

20

–

20

–

20

–

μs

tKC Reset

tKC Reset

K Static to PLL Reset

30

–

30

–

30

–

30

–

30

–

ns

Notes

23.These parameters are extrapolated from the input timing parameters (tCYC/2 - 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by design and are not tested in production.

24.tCHZ, tCLZ are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms. Transition is measured ±100 mV from steady-state voltage.

25.At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.

Document Number: 001-00437 Rev. *E

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Cypress CY7C1520KV18, CY7C1516KV18, CY7C1527KV18, CY7C1518KV18 manual Parameter Min Max Output Times, PLL Timing
Page 23 Page 25

CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

One of the standout features of these devices is their high-speed access times, which typically range from 12 ns to 15 ns, allowing for rapid data retrieval and writing. This speed makes them ideal for applications where low latency is crucial, such as in cache memory systems and high-speed computing. The low power consumption of these devices also makes them attractive for battery-operated equipment, as they can operate effectively while minimizing energy usage.

The CY7C1516KV18 and other models in this series incorporate advanced CMOS technology, which is instrumental in achieving low standby and active power requirements. This technology not only enhances the overall efficiency of the memory devices but also contributes to reduced thermal generation, which is an essential factor in maintaining performance and longevity in high-density applications.

Data integrity is another critical characteristic of these SRAM devices. They are designed with features such as byte-write capability and asynchronous read/write operations, ensuring that users can manage data efficiently and reliably. The robust architecture also allows for simple interfacing with most processors and microcontrollers, facilitating easy integration into various systems.

The packages of these SRAM chips are available in several form factors, including 44-pin and 48-pin configurations, allowing for flexibility in board design and layout. Their compatibility with standard interface protocols ensures seamless communication with other components of electronic designs.

These Cypress SRAM devices support a range of temperature specifications, making them suitable for both commercial and industrial-grade applications. Enhanced reliability during various operating conditions assures designers that these memory chips will maintain performance in diverse environments.

In summary, the Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 SRAM devices offer high speed, low power consumption, and flexibility in integration. With their advanced technology and robust features, these memory solutions continue to play a vital role in modern electronics, driving innovation across multiple sectors.
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