CY7C1516KV18, CY7C1527KV18

CY7C1518KV18, CY7C1520KV18

Identification Register Definitions

Instruction Field

 

Value

 

Description

CY7C1516KV18

CY7C1527KV18

CY7C1518KV18

CY7C1520KV18

 

 

Revision Number

000

000

000

000

Version number.

(31:29)

 

 

 

 

 

Cypress Device ID

11010100010000100

11010100010001100

11010100010010100

11010100010100100

Defines the type of

(28:12)

 

 

 

 

SRAM.

Cypress JEDEC ID

00000110100

00000110100

00000110100

00000110100

Allows unique

(11:1)

 

 

 

 

identification of

 

 

 

 

 

SRAM vendor.

ID Register

1

1

1

1

Indicates the

Presence (0)

 

 

 

 

presence of an ID

 

 

 

 

 

register.

Scan Register Sizes

Register Name

Bit Size

Instruction

3

 

 

Bypass

1

 

 

ID

32

 

 

Boundary Scan

109

 

 

Instruction Codes

Instruction

Code

Description

EXTEST

000

Captures the input and output ring contents.

 

 

 

IDCODE

001

Loads the ID register with the vendor ID code and places the register between TDI and TDO.

 

 

This operation does not affect SRAM operation.

SAMPLE Z

010

Captures the input and output contents. Places the boundary scan register between TDI and

 

 

TDO. Forces all SRAM output drivers to a High-Z state.

RESERVED

011

Do Not Use: This instruction is reserved for future use.

 

 

 

SAMPLE/PRELOAD

100

Captures the input and output ring contents. Places the boundary scan register between TDI

 

 

and TDO. Does not affect the SRAM operation.

RESERVED

101

Do Not Use: This instruction is reserved for future use.

 

 

 

RESERVED

110

Do Not Use: This instruction is reserved for future use.

 

 

 

BYPASS

111

Places the bypass register between TDI and TDO. This operation does not affect SRAM

 

 

operation.

Document Number: 001-00437 Rev. *E

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Cypress CY7C1516KV18 Identification Register Definitions, Scan Register Sizes, Instruction Codes, Register Name Bit Size

CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

One of the standout features of these devices is their high-speed access times, which typically range from 12 ns to 15 ns, allowing for rapid data retrieval and writing. This speed makes them ideal for applications where low latency is crucial, such as in cache memory systems and high-speed computing. The low power consumption of these devices also makes them attractive for battery-operated equipment, as they can operate effectively while minimizing energy usage.

The CY7C1516KV18 and other models in this series incorporate advanced CMOS technology, which is instrumental in achieving low standby and active power requirements. This technology not only enhances the overall efficiency of the memory devices but also contributes to reduced thermal generation, which is an essential factor in maintaining performance and longevity in high-density applications.

Data integrity is another critical characteristic of these SRAM devices. They are designed with features such as byte-write capability and asynchronous read/write operations, ensuring that users can manage data efficiently and reliably. The robust architecture also allows for simple interfacing with most processors and microcontrollers, facilitating easy integration into various systems.

The packages of these SRAM chips are available in several form factors, including 44-pin and 48-pin configurations, allowing for flexibility in board design and layout. Their compatibility with standard interface protocols ensures seamless communication with other components of electronic designs.

These Cypress SRAM devices support a range of temperature specifications, making them suitable for both commercial and industrial-grade applications. Enhanced reliability during various operating conditions assures designers that these memory chips will maintain performance in diverse environments.

In summary, the Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 SRAM devices offer high speed, low power consumption, and flexibility in integration. With their advanced technology and robust features, these memory solutions continue to play a vital role in modern electronics, driving innovation across multiple sectors.