µ
PD75P3116
34 Data Sheet U11369EJ3V0DS
Subsystem Clock Oscillator Characteristics (T
A
= –40 to +85˚C, V
DD
= 1.8 to 5.5 V)
Resonator Recommended Constant Parameter Test Conditions MIN. TYP. MAX. Unit
Crystal Oscillation 32 32.768 35 kHz
resonator frequency (fXT)Note 1
Oscillation VDD = 4.5 to 5.5 V 1.0 2 s
stabilization timeNote 2 VDD = 1.8 to 5.5 V 10
External XT1 input frequency 32 100 kHz
clock (fXT)Note 1
XT1 input high-/low-level
515
µ
s
width (tXTH, tXTL)
Notes 1. Indicates only oscillator characteristics. Refer to AC Characteristics for instruction execution time.
2. The oscillation stabilization time is necessary for oscillation to stabilize after applying VDD.
Caution When using the subsystem clock oscillator, wire as follows in the area enclosed by the broken lines
in the above figures to avoid an adverse effect from wiring capacitance.
Keep the wiring length as short as possible.
Do not cross the wiring with the other signal lines.
Do not route the wiring near a signal line through which a high fluctuating current flows.
Always make the ground point of the oscillator capacitor the same potential as VDD.
Do not ground the capacitor to a ground pattern through which a high current flows.
Do not fetch signals from the oscillator.
The subsystem clock oscillator is designed as a low amplification circuit to provide low consumption
current, and is more liable to misoperation by noise than the main system clock oscillator. Special
care should therefore be taken regarding the wiring method when the subsystem clock is used.
XT2
XT1
C4
V
DD
C3
R
XT1 XT2