PMC

Pm25LV512 / Pm25LV010

512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory

With 25 MHz SPI Bus Interface

FEATURES

Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V

Memory Organization

-Pm25LV512: 64K x 8 (512 Kbit)

-Pm25LV010: 128K x 8 (1 Mbit)

Cost Effective Sector/Block Architecture - Uniform 4 Kbyte sectors

- Uniform 32 Kbyte blocks (8 sectors per block) - Two blocks with 32 Kbytes each (512 Kbit)

- Four blocks with 32 Kbytes each (1 Mbit) - 128 pages per block

Serial Peripheral Interface (SPI) Compatible - Supports SPI Modes 0 (0,0) and 3 (1,1)

High Performance Read

- 25 MHz clock rate (maximum)

Page Mode for Program Operations - 256 bytes per page

Block Write Protection

-The Block Protect (BP1, BP0) bits allow part or entire of the memory to be configured as read-only.

Hardware Data Protection

-Write Protect (WP#) pin will inhibit write operations to the status register

Page Program (up to 256 Bytes) - Typical 2 ms per page program time

Sector, Block and Chip Erase

- Typical 40 ms sector/block/chip erase time

Single Cycle Reprogramming for Status Register - Build-in erase before programming

High Product Endurance

-Guarantee 100,000 program/erase cycles per single sector (preliminary)

-Minimum 20 years data retention

Industrial Standard Pin-out and Package - 8-pin JEDEC SOIC

- 8-contact WSON

- Optional lead-free (Pb-free) packages

GENERAL DESCRIPTION

The Pm25LV512/010 are 512 Kbit/1 Mbits 3.0 Volt-only serial Flash memories. These devices are designed to use a single low voltage, range from 2.7 Volt to 3.6 Volt, power supply to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers as well.

The device is optimized for use in many commercial applications where low-power and low-voltage operation are essential. The Pm25LV512/010 is enabled through the Chip Enable pin (CE#) and accessed via a 3-wire interface consisting of Serial Data Input (Sl), Serial Data Output (SO), and Serial Clock (SCK). All write cycles are com- pletely self-timed.

Block Write protection for top 1/4, top 1/2 or the entire memory array (1M) or entire memory array (512K) is enabled by programming the status register. Separate write enable and write disable instructions are provided for additional data protection. Hardware data protection is provided via the WP pin to protect against inadvertent write attempts to the status register. The HOLD pin may be used to suspend any serial communication without resetting the serial sequence.

The Pm25LV512/010 are manufactured on PMC’s advanced nonvolatile CMOS technology, P-FLASH™. The de- vices are offered in 8-pin JEDEC SOIC and 8-contact WSON packages with operation frequency up to 25 MHz.

Programmable Microelectronics Corp.

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Issue Date: February, 2004, Rev: 1.4

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PMC-Sierra Pm25LV010, Pm25LV512 manual Features, General Description, Hardware Data Protection

Pm25LV512, Pm25LV010 specifications

PMC-Sierra is renowned for its high-performance semiconductor solutions, and the PM25LV010 and PM25LV512 are standout products in their lineup of serial NOR flash memory devices. These memory chips are specifically designed for a range of applications that include networking, storage, and consumer electronics, providing reliable performance and efficient data storage.

The PM25LV010 offers 1 megabit of storage capacity, while the PM25LV512 provides 512 kilobits. Both devices feature a simple serial interface that allows for quick and easy connections to various microcontrollers and digital signal processors. This makes them particularly attractive for systems that require fast access to stored data and simplified design architecture.

One of the primary features of the PM25LV010 and PM25LV512 is their high-speed read capability. With access times as low as 45 nanoseconds, these chips enable rapid data retrieval, ensuring that systems can operate effectively without bottlenecks caused by slow memory access. This is particularly crucial in applications where real-time data processing is essential, such as in communications systems or digital signal processing.

In terms of technology, both devices utilize advanced CMOS manufacturing processes that enhance their reliability and performance. They offer flexibility in programming and erasing, with full chip erase functionality and the ability to program data on a page basis. This allows for efficient updates to the stored information without the need to erase large sections of memory.

Power efficiency is another critical aspect of the PM25LV010 and PM25LV512. These devices consume very little power during both active and standby modes, making them suitable for battery-operated devices and energy-sensitive applications. Their low power consumption ensures extended operation time, which is a significant advantage in portable consumer electronics.

Additionally, both chips are designed with robust security features that aid in protecting sensitive data from unauthorized access. They support a variety of locking and protection mechanisms, ensuring that critical information remains confidential.

In summary, the PMC-Sierra PM25LV010 and PM25LV512 serial NOR flash memory devices merge high-speed performance, low power consumption, and advanced security, making them excellent choices for diverse applications in the modern digital landscape. Their design and technology cater to the growing demand for efficient, reliable, and secure memory solutions in today's rapidly evolving electronic ecosystems.